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NDT456P-VB Product details
Back to previous pageProduct introduction：
Application Introduction:
NDT456P-VB is a P-channel field effect transistor (MOSFET) suitable for electronic applications that require negative voltage operation. It has low on-resistance and moderate current handling capability, suitable for a range of power control and switching applications.
Detailed parameter description:
1. **Type**: This is a P-channel MOSFET, which means that it turns on when a negative voltage is input. This type of MOSFET is often used in circuits that require negative voltage operation.
2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is -40V. This means that under normal operating conditions, its voltage can be negative, but should not exceed -40V.
3. **Maximum continuous current (Id)**: The maximum current handling capacity of this MOSFET is -6A. The negative sign indicates that the current flows from source to drain.
4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 42mΩ, while at 4.5V it is 49mΩ. Low on-resistance means it can generate less power consumption in the on state.
5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of the MOSFET is ±20V, which means that a voltage of up to ±20V is required to control its on state.
6. **Threshold voltage (Vth)**: The threshold voltage of this MOSFET is -0.83V. This is the gate-source voltage that starts the MOSFET on.
7. **Package**: This MOSFET is packaged in SOT223, a small package suitable for small circuit boards and space-constrained applications.
This P-channel MOSFET is suitable for electronic modules and devices that require negative voltage operation, providing power control and current management functions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | -40V | -1.7V | -6.2A | 48(mΩ) | 40(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | -40V | -1.7V | -6.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | -40V | -1.7V | -6.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-P |
Model: NDT456P-VB
Silkscreen: VBJ2456
Brand: VBsemi
Parameters:
- Type: P-channel
- Rated voltage (Vds): -40V
- Maximum continuous current (Id): -6A
- On-resistance (RDS(ON)): 42mΩ @ 10V, 49mΩ @ 4.5V
- Gate-source voltage range (Vgs): ±20V (positive and negative)
- Threshold voltage (Vth): -0.83V
- Package: SOT223
Silkscreen: VBJ2456
Brand: VBsemi
Parameters:
- Type: P-channel
- Rated voltage (Vds): -40V
- Maximum continuous current (Id): -6A
- On-resistance (RDS(ON)): 42mΩ @ 10V, 49mΩ @ 4.5V
- Gate-source voltage range (Vgs): ±20V (positive and negative)
- Threshold voltage (Vth): -0.83V
- Package: SOT223
Domain and module applications：
Applications:
NDT456P-VB is a MOSFET suitable for a variety of electronic applications, especially those that require negative voltage operation, including but not limited to the following applications:
1. **Battery protection**: Can be used in battery protection circuits to ensure that the battery is not overcharged or over-discharged.
2. **Switching power supply**: Can be used in negative voltage switching power supplies for voltage conversion and stabilization.
3. **Power switch**: Can be used for negative voltage power switches for power control of various electronic devices.
4. **Negative voltage circuit**: Can be used in various electronic circuits that operate with negative voltage, such as current control, inverters, and power management.
NDT456P-VB is a MOSFET suitable for a variety of electronic applications, especially those that require negative voltage operation, including but not limited to the following applications:
1. **Battery protection**: Can be used in battery protection circuits to ensure that the battery is not overcharged or over-discharged.
2. **Switching power supply**: Can be used in negative voltage switching power supplies for voltage conversion and stabilization.
3. **Power switch**: Can be used for negative voltage power switches for power control of various electronic devices.
4. **Negative voltage circuit**: Can be used in various electronic circuits that operate with negative voltage, such as current control, inverters, and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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