中文
English
PHT6N06T-VB Product details
Back to previous pageProduct introduction：
Detailed parameter description:
PHT6N06T-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of 60V and a maximum continuous current of 4A. Its RDS(ON) performs well at different voltages, 76mΩ @ 10V and 85mΩ @ 4.5V respectively. In addition, its threshold voltage (Vth) is 1.53V.
Application introduction:
PHT6N06T-VB is commonly used in power management, power switching and power converter applications, especially for circuits requiring N-channel MOSFET. The SOT223 package makes it easy to integrate into small electronic devices.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 85(mΩ) | 76(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Model: PHT6N06T-VB
Silkscreen: VBJ1695
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 60V
- Maximum continuous current: 4A
- Static on-resistance (RDS(ON)): 76mΩ @ 10V, 85mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.53V
- Package: SOT223
Silkscreen: VBJ1695
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 60V
- Maximum continuous current: 4A
- Static on-resistance (RDS(ON)): 76mΩ @ 10V, 85mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.53V
- Package: SOT223
Domain and module applications：
This type of MOSFET can be used in modules in various fields such as power inverters, power switches, battery protection circuits, mobile devices, power management, power amplifiers, power tools and other low to medium power applications. Its low on-resistance and moderate current handling capability make it very useful in high efficiency, low power consumption applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
