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NIF9N05CLT1G-VB Product details
Back to previous pageProduct introduction：
**Application Introduction:**
NIF9N05CLT1G-VB is a SOT223 packaged N-Channel MOSFET, suitable for circuit design in various fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 85(mΩ) | 76(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Model: NIF9N05CLT1G-VB
Silkscreen: VBJ1695
Brand: VBsemi
Package: SOT223
**Detailed parameter description:**
- Architecture: N-Channel MOSFET
- Voltage level: 60V
- Current capability: 4A
- RDS(ON): 76mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage(Vth): 1.53V
Silkscreen: VBJ1695
Brand: VBsemi
Package: SOT223
**Detailed parameter description:**
- Architecture: N-Channel MOSFET
- Voltage level: 60V
- Current capability: 4A
- RDS(ON): 76mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage(Vth): 1.53V
Domain and module applications：
The following are the fields and modules that this device may be applied to:
1. **Power module:** Suitable for small power modules, capable of providing efficient power switching and voltage regulation.
2. **Battery management:** Can be used in battery charge and discharge management modules, supporting medium current capacity and relatively low threshold voltage.
3. **LED lighting:** Suitable for LED lighting drive circuits, with moderate current capability and low on-resistance, which helps to achieve efficient LED lighting systems.
4. **Power switch:** As an N-Channel MOSFET, it can be used for power switching to control the on and off of the circuit, improving the efficiency and response speed of the circuit.
**Precautions for use:**
- When designing the circuit, make sure to understand and follow the maximum rated voltage and current of the device to prevent device damage.
- Pay attention to proper heat dissipation measures, especially in high current applications, to ensure that the device is within the normal operating temperature range.
1. **Power module:** Suitable for small power modules, capable of providing efficient power switching and voltage regulation.
2. **Battery management:** Can be used in battery charge and discharge management modules, supporting medium current capacity and relatively low threshold voltage.
3. **LED lighting:** Suitable for LED lighting drive circuits, with moderate current capability and low on-resistance, which helps to achieve efficient LED lighting systems.
4. **Power switch:** As an N-Channel MOSFET, it can be used for power switching to control the on and off of the circuit, improving the efficiency and response speed of the circuit.
**Precautions for use:**
- When designing the circuit, make sure to understand and follow the maximum rated voltage and current of the device to prevent device damage.
- Pay attention to proper heat dissipation measures, especially in high current applications, to ensure that the device is within the normal operating temperature range.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
