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ZXMN6A25GTA-VB Product details
Back to previous pageProduct introduction：
Application Introduction:
ZXMN6A25GTA-VB is an N-channel field effect transistor (MOSFET) with a high rated voltage and moderate current handling capability. It is suitable for a variety of low-power electronic applications that require high energy consumption, low on-resistance, and low gate-source voltage operation.
Detailed parameter description:
1. **Type**: This is an N-channel MOSFET, which means that it turns on when the input positive voltage. This type of MOSFET is often used in switching and regulation circuits.
2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is 60V. This means that under normal operating conditions, its voltage should not exceed 60V.
3. **Maximum continuous current (Id)**: The maximum current handling capacity of this MOSFET is 7A. Although not very high, it is still enough in low-power applications.
4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 24mΩ, and at 4.5V it is 27mΩ. Low on-resistance means it can generate less power consumption in the on state.
5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of the MOSFET is ±20V, which means that a voltage of at least ±20V is required to control its on state.
6. **Threshold voltage range (Vth)**: The threshold voltage range of this MOSFET is 1-3V. This is the gate-source voltage range that starts the MOSFET on.
7. **Package**: This MOSFET uses a SOT223 package, which is a small package suitable for small circuit boards and space-constrained applications.
This MOSFET is suitable for low-power electronic modules and devices that require high energy efficiency, low on-resistance and low gate-source voltage operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 33(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Model: ZXMN6A25GTA-VB
Silkscreen: VBJ1638
Brand: VBsemi
Parameters:
- Type: N-channel
- Rated voltage (Vds): 60V
- Maximum continuous current (Id): 7A
- On-resistance (RDS(ON)): 24mΩ @ 10V, 27mΩ @ 4.5V
- Gate-source voltage range (Vgs): ±20V (positive and negative)
- Threshold voltage range (Vth): 1-3V
- Package: SOT223
Silkscreen: VBJ1638
Brand: VBsemi
Parameters:
- Type: N-channel
- Rated voltage (Vds): 60V
- Maximum continuous current (Id): 7A
- On-resistance (RDS(ON)): 24mΩ @ 10V, 27mΩ @ 4.5V
- Gate-source voltage range (Vgs): ±20V (positive and negative)
- Threshold voltage range (Vth): 1-3V
- Package: SOT223
Domain and module applications：
Applications:
ZXMN6A25GTA-VB is a MOSFET suitable for a variety of low-power electronic applications, including but not limited to the following areas:
1. **Mobile devices**: Can be used in power management and battery protection circuits for mobile phones, tablets and portable electronic devices.
2. **Power switches**: Can be used in switch-mode power supplies for voltage conversion and stabilization.
3. **LED drivers**: Used for current control and dimming control in LED lighting systems.
4. **Low-power electronics**: Can be used in embedded systems, microcontrollers and sensor interfaces to reduce power consumption and improve efficiency.
5. **Battery charging and discharging**: Used in battery charging and discharging management circuits to ensure safe and efficient battery use.
ZXMN6A25GTA-VB is a MOSFET suitable for a variety of low-power electronic applications, including but not limited to the following areas:
1. **Mobile devices**: Can be used in power management and battery protection circuits for mobile phones, tablets and portable electronic devices.
2. **Power switches**: Can be used in switch-mode power supplies for voltage conversion and stabilization.
3. **LED drivers**: Used for current control and dimming control in LED lighting systems.
4. **Low-power electronics**: Can be used in embedded systems, microcontrollers and sensor interfaces to reduce power consumption and improve efficiency.
5. **Battery charging and discharging**: Used in battery charging and discharging management circuits to ensure safe and efficient battery use.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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