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FDT439N-VB Product details
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Application Introduction:
FDT439N-VB is an N-channel field effect transistor (FET) with moderate voltage and current characteristics. It is suitable for electronic applications that require current control and low on-resistance. The SOT223 package is suitable for compact circuit design.
FDT439N-VB is an N-channel field effect transistor suitable for various electronic applications, such as power management, battery management, circuit protection and low-power electronic applications. Its SOT223 package makes it suitable for compact circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 21(mΩ) | 19(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Model: FDT439N-VB
Silkscreen: VBJ1322
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 30V
- Rated current: 7A
- Static on-resistance (RDS(ON)): 25mΩ @ 10V, 38mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.5V
- Package type: SOT223
Silkscreen: VBJ1322
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 30V
- Rated current: 7A
- Static on-resistance (RDS(ON)): 25mΩ @ 10V, 38mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.5V
- Package type: SOT223
Domain and module applications：
Applications:
1. Power switch modules: FDT439N-VB can be used in power switch circuits such as switching regulators, DC-DC converters, and power amplifiers to achieve efficient power conversion and stable power output.
2. Battery management: In battery-powered systems, charging devices, and portable electronic devices, this transistor can be used for battery protection and battery charge/discharge control.
3. Circuit protection: In circuit protection devices, this N-channel field effect transistor can be used for overcurrent protection, short circuit protection, and voltage protection to ensure safe operation of the circuit.
4. Low-power electronics: In low-power electronic applications such as sensor interfaces, microcontroller power supplies, and small consumer electronic devices, FDT439N-VB can be used for circuit control and power management.
1. Power switch modules: FDT439N-VB can be used in power switch circuits such as switching regulators, DC-DC converters, and power amplifiers to achieve efficient power conversion and stable power output.
2. Battery management: In battery-powered systems, charging devices, and portable electronic devices, this transistor can be used for battery protection and battery charge/discharge control.
3. Circuit protection: In circuit protection devices, this N-channel field effect transistor can be used for overcurrent protection, short circuit protection, and voltage protection to ensure safe operation of the circuit.
4. Low-power electronics: In low-power electronic applications such as sensor interfaces, microcontroller power supplies, and small consumer electronic devices, FDT439N-VB can be used for circuit control and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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