SM1105NSV-VB Product details
Product introduction:
Application Introduction:
SM1105NSV-VB is an N-channel field effect transistor suitable for a variety of low-power and medium-power electronic applications with low on-resistance and high rated voltage.
SM1105NSV-VB N-channel MOSFET is suitable for a variety of low-power and medium-power applications, including power management, battery protection, signal switching, power switching and low-power current regulation modules. It helps to achieve high efficiency and reliability of low-power electronic systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 120(mΩ) | 100(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Silkscreen: VBJ1101M
Brand: VBsemi
Parameters:
- N-channel
- Rated voltage: 100V
- Maximum leakage current: 5A
- Static drain-source resistance (RDS(ON)): 100mΩ @ 10V, 120mΩ @ 4.5V, ±20Vgs
- Threshold voltage (Vth) range: 2V to 4V
- Package: SOT223
Domain and module applications:
1. **Power Management**: This N-channel MOSFET is suitable for low-power power management modules such as power switches, power management units, and power adapters. It helps to achieve high efficiency and reliability of the circuit.
2. **Battery Protection**: In portable electronic devices, SM1105NSV-VB can be used in battery protection circuits to ensure safety and stability during battery charging and discharging.
3. **Signal Switch**: This MOSFET can be used in low-power signal switching applications such as analog signal switching, digital signal switching, and signal amplifiers.
4. **Power Switch**: In low-power power switching circuits, it can be used to control and adjust the power output to meet the power requirements of different low-power electronic devices.
5. **Current Regulation Module**: SM1105NSV-VB can also be used in low-power current regulation modules such as LED drivers, low-power current regulation circuits, and power management units to ensure the stability and accuracy of circuit output.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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