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AP9997GK-VB Product details

Product introduction:



Application Introduction:
AP9997GK-VB is an N-channel field effect transistor (MOSFET) with a high rated voltage and moderate current handling capability. It is suitable for a variety of applications, especially those that require high voltage switching and current control.

Detailed parameter description:
1. **Type**: This is an N-channel MOSFET, which means that it turns on when the input positive voltage. This type of MOSFET is often used in switching and regulation circuits.

2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is 100V. This means that under normal operating conditions, its voltage should not exceed 100V.

3. **Maximum continuous current (Id)**: The maximum current handling capacity of this MOSFET is 5A. Although not very high, it is still enough in a variety of high voltage applications.

4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 100mΩ, which means that the power consumption in the on state is relatively low.

5. **Gate-Source Voltage Range (Vgs)**: The gate-source voltage range of the MOSFET is ±20V, which means that a voltage of up to ±20V is required to control its on state.

6. **Threshold Voltage Range (Vth)**: The threshold voltage range of this MOSFET is 2-4V. This is the gate-source voltage range that starts the MOSFET on.

7. **Package**: This MOSFET is packaged in SOT223, a small package suitable for small circuit boards and space-constrained applications.


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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT223 Single-N 100V 1.8V 5A 120(mΩ) 100(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT223 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT223 Single-N 100V 1.8V 5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT223 Single-N 100V 1.8V 5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT223 Single-N
Model: AP9997GK-VB
Silkscreen: VBJ1101M
Brand: VBsemi
Parameters:
- Type: N-channel
- Rated voltage (Vds): 100V
- Maximum continuous current (Id): 5A
- On-resistance (RDS(ON)): 100mΩ @ 10V
- Gate-source voltage range (Vgs): ±20V (positive and negative)
- Threshold voltage range (Vth): 2-4V
- Package: SOT223

Domain and module applications:

Application areas:
AP9997GK-VB is suitable for a variety of high-voltage electronic applications, including but not limited to the following modules:

1. **Power switch**: can be used for high-voltage switching power supplies, such as voltage conversion and power stabilization.

2. **Motor drive**: used in motor controllers to control the speed and direction of the motor.

3. **Power inverter**: used in inverter circuits to convert DC to AC, such as solar inverters and power inverters.

4. **High voltage power management**: used for high-voltage power management and current control circuits, such as industrial electronic equipment.

5. **Battery management**: used in applications that require high-voltage battery charge and discharge management to ensure safe and efficient battery use.

In short, this N-channel MOSFET is suitable for high-voltage electronic modules and devices that require high-voltage switching and current control, providing power control and current management functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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