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RQJ0602EGDQSTL-E-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
RQJ0602EGDQSTL-E-VB is a VBsemi brand P-Channel trench MOSFET with a rated voltage of -60V and a rated current of -5A. At a gate voltage of 10V, its on-resistance is 58mΩ. The device is packaged in SOT89-3 and is suitable for various low-power applications.
RQJ0602EGDQSTL-E-VB is suitable for various modules and equipment in the fields of power management, low-power electronic devices, portable electronic products and automatic control systems.
RQJ0602EGDQSTL-E-VB is a VBsemi brand P-Channel trench MOSFET with a rated voltage of -60V and a rated current of -5A. At a gate voltage of 10V, its on-resistance is 58mΩ. The device is packaged in SOT89-3 and is suitable for various low-power applications.
RQJ0602EGDQSTL-E-VB is suitable for various modules and equipment in the fields of power management, low-power electronic devices, portable electronic products and automatic control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -60V | -1.7V | -6.5A | 65(mΩ) | 58(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -60V | -1.7V | -6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -60V | -1.7V | -6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
Detailed parameter description:
- Channel type: P-Channel
- Rated voltage (VDS): -60V
- Rated current (ID): -5A
- On-resistance (RDS(ON)): 58mΩ @ VGS=10V
- Gate voltage (VGS): ±20V
- Gate threshold voltage (Vth): 1~3V
- Package type: SOT89-3
- Channel type: P-Channel
- Rated voltage (VDS): -60V
- Rated current (ID): -5A
- On-resistance (RDS(ON)): 58mΩ @ VGS=10V
- Gate voltage (VGS): ±20V
- Gate threshold voltage (Vth): 1~3V
- Package type: SOT89-3
Domain and module applications：
Applicable fields and modules:
1. **Power management**: Due to its P-Channel structure, RQJ0602EGDQSTL-E-VB is often used for load switching and reverse voltage protection. In power management circuits, it can be used as a key component for functions such as battery charge and discharge protection, switching power supply and voltage regulator.
2. **Low-power electronic devices**: The SOT89-3 package makes this MOSFET suitable for a variety of low-power electronic devices such as handheld devices, consumer electronics and medical equipment. It can be used for applications such as battery management, signal switching and low-power drive.
3. **Portable electronic products**: Due to its low power consumption characteristics and small package, RQJ0602EGDQSTL-E-VB is often used in portable electronic products such as smartphones, tablets and portable electronic instruments. It can help realize functions such as power management, signal switching and power control.
4. **Automatic control system**: In automatic control systems, this MOSFET can be used for various load switching and power management functions. For example, it can be used for power switching and current control in automotive electronic systems, industrial automation equipment, and home appliances.
1. **Power management**: Due to its P-Channel structure, RQJ0602EGDQSTL-E-VB is often used for load switching and reverse voltage protection. In power management circuits, it can be used as a key component for functions such as battery charge and discharge protection, switching power supply and voltage regulator.
2. **Low-power electronic devices**: The SOT89-3 package makes this MOSFET suitable for a variety of low-power electronic devices such as handheld devices, consumer electronics and medical equipment. It can be used for applications such as battery management, signal switching and low-power drive.
3. **Portable electronic products**: Due to its low power consumption characteristics and small package, RQJ0602EGDQSTL-E-VB is often used in portable electronic products such as smartphones, tablets and portable electronic instruments. It can help realize functions such as power management, signal switching and power control.
4. **Automatic control system**: In automatic control systems, this MOSFET can be used for various load switching and power management functions. For example, it can be used for power switching and current control in automotive electronic systems, industrial automation equipment, and home appliances.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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