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RQJ0301HGDQS-VB Product details
Back to previous pageProduct introduction：
RQJ0301HGDQS-VB is a P-Channel MOSFET produced by VBsemi, with the following parameters:
- Maximum withstand voltage: -30V
- Maximum drain current: -7.6A
- Drain-source resistance: 50mΩ @ VGS=10V
- Threshold voltage: -1.7V
- Package: SOT89-3
Product introduction:
RQJ0301HGDQS-VB is a P-Channel MOSFET with stable and reliable performance, suitable for power switching and power management applications in various circuits. Its excellent electrical characteristics and high-efficiency working performance make it an ideal choice for a wide range of applications.
- Maximum withstand voltage: -30V
- Maximum drain current: -7.6A
- Drain-source resistance: 50mΩ @ VGS=10V
- Threshold voltage: -1.7V
- Package: SOT89-3
Product introduction:
RQJ0301HGDQS-VB is a P-Channel MOSFET with stable and reliable performance, suitable for power switching and power management applications in various circuits. Its excellent electrical characteristics and high-efficiency working performance make it an ideal choice for a wide range of applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | 56(mΩ) | 50(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
Detailed parameter description:
1. Maximum withstand voltage (VDS): -30V
2. Maximum drain current (ID): -7.6A
3. Drain-source resistance (RDS(ON)): 50mΩ @ VGS=10V
4. Threshold voltage (Vth): -1.7V
5. Package: SOT89-3
1. Maximum withstand voltage (VDS): -30V
2. Maximum drain current (ID): -7.6A
3. Drain-source resistance (RDS(ON)): 50mΩ @ VGS=10V
4. Threshold voltage (Vth): -1.7V
5. Package: SOT89-3
Domain and module applications：
Examples of applicable fields and modules:
This type of MOSFET can be widely used in the following fields and modules:
1. Power management module: used for power switches in voltage regulation and switching power supplies;
2. Portable electronic products: such as power management modules for tablet computers, smart phones, etc.;
3. LED lighting drivers: used for current control and dimming functions of LED lamps;
4. Automotive electronic systems: such as power switch control modules for car audio systems, car navigation systems, etc.;
5. Industrial control systems: used for power switch control and drive of industrial automation equipment.
These examples illustrate the wide application of RQJ0301HGDQS-VB in different fields and modules, demonstrating its flexibility and reliability in various circuit designs.
This type of MOSFET can be widely used in the following fields and modules:
1. Power management module: used for power switches in voltage regulation and switching power supplies;
2. Portable electronic products: such as power management modules for tablet computers, smart phones, etc.;
3. LED lighting drivers: used for current control and dimming functions of LED lamps;
4. Automotive electronic systems: such as power switch control modules for car audio systems, car navigation systems, etc.;
5. Industrial control systems: used for power switch control and drive of industrial automation equipment.
These examples illustrate the wide application of RQJ0301HGDQS-VB in different fields and modules, demonstrating its flexibility and reliability in various circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
