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QM3003J-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model:** QM3003J-VB
**Silkscreen:** VBI2338
**Brand:** VBsemi
**Product Description:** QM3003J-VB is a P-channel MOSFET device produced by VBsemi with a negative maximum drain-source voltage (-30V) and a maximum drain current (-7.6A). The on-resistance (RDS(ON)) of this MOSFET is 50mΩ when the gate-source voltage (Vgs) is 10V. Its gate threshold voltage (Vth) is in the range of -0.6V to -2V. QM3003J-VB adopts SOT89-3 package, which has good heat dissipation performance and reliability, and is suitable for various electronic devices and systems.
The wide range of applications and reliability of QM3003J-VB make it an ideal choice for electronic engineers when designing various circuits and systems.
**Model:** QM3003J-VB
**Silkscreen:** VBI2338
**Brand:** VBsemi
**Product Description:** QM3003J-VB is a P-channel MOSFET device produced by VBsemi with a negative maximum drain-source voltage (-30V) and a maximum drain current (-7.6A). The on-resistance (RDS(ON)) of this MOSFET is 50mΩ when the gate-source voltage (Vgs) is 10V. Its gate threshold voltage (Vth) is in the range of -0.6V to -2V. QM3003J-VB adopts SOT89-3 package, which has good heat dissipation performance and reliability, and is suitable for various electronic devices and systems.
The wide range of applications and reliability of QM3003J-VB make it an ideal choice for electronic engineers when designing various circuits and systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | 56(mΩ) | 50(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
### Detailed parameter description
- **Model:** QM3003J-VB
- **Silkscreen:** VBI2338
- **Brand:** VBsemi
- **Polarity:** P-channel
- **Maximum drain-source voltage (Vds):** -30V
- **Maximum drain current (Id):** -7.6A
- **On-resistance (RDS(ON)):** 50mΩ (Vgs = 10V)
- **Gate threshold voltage (Vth):** -0.6V to -2V
- **Maximum gate-source voltage (Vgs):** ±20V
- **Package type:** SOT89-3
- **Operating temperature range:** -55°C to 150°C
- **Power dissipation (Pd):** 2W
- **Input capacitance (Ciss):** 350pF (typical)
- **Output capacitance (Coss):** 75pF (typical)
- **Reverse transfer capacitance (Crss):** 45pF (typical)
- **Switching time:**
- Turn on time (ton): 15ns
- Turn off time (toff): 25ns
- **Model:** QM3003J-VB
- **Silkscreen:** VBI2338
- **Brand:** VBsemi
- **Polarity:** P-channel
- **Maximum drain-source voltage (Vds):** -30V
- **Maximum drain current (Id):** -7.6A
- **On-resistance (RDS(ON)):** 50mΩ (Vgs = 10V)
- **Gate threshold voltage (Vth):** -0.6V to -2V
- **Maximum gate-source voltage (Vgs):** ±20V
- **Package type:** SOT89-3
- **Operating temperature range:** -55°C to 150°C
- **Power dissipation (Pd):** 2W
- **Input capacitance (Ciss):** 350pF (typical)
- **Output capacitance (Coss):** 75pF (typical)
- **Reverse transfer capacitance (Crss):** 45pF (typical)
- **Switching time:**
- Turn on time (ton): 15ns
- Turn off time (toff): 25ns
Domain and module applications：
### Applications and Modules
QM3003J-VB P-channel MOSFET has a wide range of applications in various fields and modules, including but not limited to:
1. **Power Inverter:** In the power inverter, QM3003J-VB can be used as a power switching device to achieve the conversion of DC power to AC power. It can be used as a switch tube in the inverter topology to control the current flow and voltage output.
2. **Battery Protection:** In portable electronic devices and battery management systems, QM3003J-VB can be used in battery protection circuits. By controlling the battery charge and discharge current, the battery is protected from overcharge, over discharge and short circuit, thereby extending the battery life.
3. **Current Controller:** This MOSFET is also suitable for current controllers and current limiters, such as chargers and LED drivers. It can adjust the ability of current to flow through the carrier to ensure stable operation of the circuit and avoid overload damage.
4. **Motor drive:** In the fields of automotive, robotics and industrial automation, QM3003J-VB can be used as a motor drive device. It can be used in DC motor drivers to help control motor speed and direction.
5. **Low-voltage switch:** Due to its negative maximum drain-source voltage, this MOSFET is suitable for low-voltage switching circuits such as low-voltage DC-DC converters and switch-mode power supplies. It can help achieve efficient energy conversion and stable power output.
QM3003J-VB P-channel MOSFET has a wide range of applications in various fields and modules, including but not limited to:
1. **Power Inverter:** In the power inverter, QM3003J-VB can be used as a power switching device to achieve the conversion of DC power to AC power. It can be used as a switch tube in the inverter topology to control the current flow and voltage output.
2. **Battery Protection:** In portable electronic devices and battery management systems, QM3003J-VB can be used in battery protection circuits. By controlling the battery charge and discharge current, the battery is protected from overcharge, over discharge and short circuit, thereby extending the battery life.
3. **Current Controller:** This MOSFET is also suitable for current controllers and current limiters, such as chargers and LED drivers. It can adjust the ability of current to flow through the carrier to ensure stable operation of the circuit and avoid overload damage.
4. **Motor drive:** In the fields of automotive, robotics and industrial automation, QM3003J-VB can be used as a motor drive device. It can be used in DC motor drivers to help control motor speed and direction.
5. **Low-voltage switch:** Due to its negative maximum drain-source voltage, this MOSFET is suitable for low-voltage switching circuits such as low-voltage DC-DC converters and switch-mode power supplies. It can help achieve efficient energy conversion and stable power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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