AP9435GG-VB Product details
Product introduction:
Silkscreen: VBI2338
Brand: VBsemi
Package: SOT89-3
**Application Introduction:**
AP9435GG-VB is a P-Channel field effect transistor with moderate leakage current, low leakage voltage, low on-resistance and other characteristics. It adopts SOT89-3 standard package and is suitable for a variety of electronic applications.
Please select appropriate components according to the specific system design requirements and make sure to follow the corresponding specifications and design guidelines.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | 56(mΩ) | 50(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
- **Channel Type:** P—Channel
- **Maximum Drain Current:** -7.6A
- **Maximum Drain-Source Voltage:** -30V
- **On-Resistance:** RDS(ON)=50mΩ @ VGS=10V,
--VGS=±20V
- **Gate Threshold Voltage:** Vth=-1.7V
Domain and module applications:
1. **Power switch module:** Due to the P-Channel structure of AP9435GG-VB, it is suitable for power switch modules to achieve efficient power control and management.
2. **Current control module:** The higher leakage current and low on-resistance of this device enable it to perform well in current control modules and can be used for precise current control applications.
3. **Low noise amplifier module:** It can be used in low noise amplifier modules to ensure good performance in situations requiring high signal-to-noise ratio.
4. **Battery protection module:** Due to its moderate performance parameters, it can be used in battery protection circuits to provide effective protection for the battery.
Technical support:
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