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2SJ355-VB Product details
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Application Introduction:
2SJ355-VB is a P-channel field effect transistor (MOSFET) suitable for electronic applications that require negative voltage operation. It has a wide range of applications in fields such as current switching and voltage inverters.
Detailed parameter description:
1. **Type**: This is a P-channel MOSFET, which means that it turns on when a negative voltage is input. This type of MOSFET is often used in circuits that require negative voltage operation.
2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is -30V. This means that it can operate under negative voltage conditions.
3. **Maximum continuous current (Id)**: The maximum current handling capacity of this MOSFET is -7.6A. The negative sign indicates that the current flows from source to drain.
4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 50mΩ, indicating relatively low power consumption in the on state.
5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of the MOSFET is ±20V, which means that a voltage of up to ±20V is required to control its on state.
6. **Threshold voltage range (Vth)**: The threshold voltage range of this MOSFET is -1.7V. This is the gate-source voltage range that starts the MOSFET on.
7. **Package**: This MOSFET is packaged in SOT89-3, a small package suitable for small circuit boards and space-constrained applications.
This P-channel MOSFET is suitable for electronic modules and devices that require negative voltage operation, providing the functions of power control and current management, especially in applications that require negative voltage operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | 56(mΩ) | 50(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
Model: 2SJ355-VB
Silkscreen: VBI2338
Brand: VBsemi
Parameters:
- Type: P-channel
- Rated voltage (Vds): -30V
- Maximum continuous current (Id): -7.6A
- On-resistance (RDS(ON)): 50mΩ @ 10V
- Gate-source voltage range (Vgs): ±20V (positive and negative)
- Threshold voltage range (Vth): -1.7V
- Package: SOT89-3
Silkscreen: VBI2338
Brand: VBsemi
Parameters:
- Type: P-channel
- Rated voltage (Vds): -30V
- Maximum continuous current (Id): -7.6A
- On-resistance (RDS(ON)): 50mΩ @ 10V
- Gate-source voltage range (Vgs): ±20V (positive and negative)
- Threshold voltage range (Vth): -1.7V
- Package: SOT89-3
Domain and module applications：
Application areas:
2SJ355-VB This P-channel MOSFET is suitable for a variety of electronic modules and devices that require negative voltage operation, including but not limited to the following modules:
1. **Power switch**: Can be used for negative voltage power switching, such as voltage conversion and power control.
2. **Voltage inverter**: Used in inverter circuits to convert DC to AC, such as solar inverters and power inverters.
3. **Battery protection**: Can be used in battery protection circuits to ensure that the battery is not overcharged or over-discharged.
4. **Load switch**: Used to control the on and off of loads, such as LED lighting systems, power tools and electronic equipment.
5. **Power management**: Used in applications that require negative voltage power management and current control to ensure efficient power supply.
2SJ355-VB This P-channel MOSFET is suitable for a variety of electronic modules and devices that require negative voltage operation, including but not limited to the following modules:
1. **Power switch**: Can be used for negative voltage power switching, such as voltage conversion and power control.
2. **Voltage inverter**: Used in inverter circuits to convert DC to AC, such as solar inverters and power inverters.
3. **Battery protection**: Can be used in battery protection circuits to ensure that the battery is not overcharged or over-discharged.
4. **Load switch**: Used to control the on and off of loads, such as LED lighting systems, power tools and electronic equipment.
5. **Power management**: Used in applications that require negative voltage power management and current control to ensure efficient power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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