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2SJ244-VB Product details
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Detailed parameter description:
2SJ244-VB is a P-channel MOSFET designed for low voltage and medium current applications. It is rated at -30V and can continuously withstand a maximum current of -7.6A. This MOSFET has good conduction characteristics, and its static on-resistance is 50mΩ at 10V and 56mΩ at 4.5V. This makes it suitable for applications requiring medium power.
2SJ244-VB has a wide range of gate-source voltage (Vgs), up to ±±20V, and has good control characteristics. Its threshold voltage (Vth) ranges from -0.6V to -2V, which enables precise control.
2SJ244-VB is a P-channel MOSFET suitable for a variety of applications, suitable for low voltage and medium current applications, providing medium power and reliability solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | 56(mΩ) | 50(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
Model: 2SJ244-VB
Silkscreen: VBI2338
Brand: VBsemi
Parameters:
- P-channel MOSFET
- Rated voltage: -30V
- Maximum continuous current: -7.6A
- Static on-resistance (RDS(ON)): 50mΩ @ 10V, 56mΩ @ 4.5V
- Gate-source voltage (Vgs): Maximum ±±20V
- Threshold voltage (Vth): -0.6V to -2V
Package: SOT89-3
Silkscreen: VBI2338
Brand: VBsemi
Parameters:
- P-channel MOSFET
- Rated voltage: -30V
- Maximum continuous current: -7.6A
- Static on-resistance (RDS(ON)): 50mΩ @ 10V, 56mΩ @ 4.5V
- Gate-source voltage (Vgs): Maximum ±±20V
- Threshold voltage (Vth): -0.6V to -2V
Package: SOT89-3
Domain and module applications：
2SJ244-VB is widely used in the following fields and modules:
1. **Power management module**: This MOSFET is suitable for low voltage power management and can be used in applications such as battery management, power switching and charging control.
2. **Signal amplifier**: Due to its medium current characteristics, it can be used to amplify signals, such as audio amplifiers and signal amplifier circuits.
3. **Power switch**: Suitable for various types of power switch modules, such as switch mode power supply (SMPS).
4. **LED driver**: Can be used in LED lighting systems to control LED brightness and switching.
1. **Power management module**: This MOSFET is suitable for low voltage power management and can be used in applications such as battery management, power switching and charging control.
2. **Signal amplifier**: Due to its medium current characteristics, it can be used to amplify signals, such as audio amplifiers and signal amplifier circuits.
3. **Power switch**: Suitable for various types of power switch modules, such as switch mode power supply (SMPS).
4. **LED driver**: Can be used in LED lighting systems to control LED brightness and switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
