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2SJ179-VB Product details
Back to previous pageProduct introduction：
Application Introduction:
2SJ179-VB is a P-channel MOSFET suitable for electronic applications requiring high performance power switches.
2SJ179-VB has a P-channel and is suitable for applications requiring a P-channel MOSFET, especially where low on-resistance is required. In actual applications, be sure to comply with the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | 56(mΩ) | 50(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
Model: 2SJ179-VB
Silkscreen: VBI2338
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -30V
- Maximum continuous current: -7.6A
- Static on resistance (RDS(ON)): 50mΩ @ 10V, 56mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): -0.6V to -2V
- Package type: SOT89-3
Silkscreen: VBI2338
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -30V
- Maximum continuous current: -7.6A
- Static on resistance (RDS(ON)): 50mΩ @ 10V, 56mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): -0.6V to -2V
- Package type: SOT89-3
Domain and module applications：
Here are some possible application areas for the modules:
1. **Power switch module**: This MOSFET can be used in power switch modules to achieve efficient switching and regulation of power. It is suitable for portable devices, power management systems, and low-voltage power applications.
2. **Battery protection module**: In applications where the battery needs to be protected from over-discharge and over-charge, the 2SJ179-VB can be used in battery protection circuits to ensure safe operation of the battery.
3. **Low noise amplifier**: Due to its low threshold voltage and low on-resistance, the 2SJ179-VB can be used in the input stage of a low noise amplifier to help achieve high-performance audio amplification.
4. **Analog switch module**: In analog circuits that require high-performance analog switches, this MOSFET can be used for analog switching and signal conditioning.
5. **Sensor interface module**: The 2SJ179-VB can be used in sensor interface modules to achieve efficient amplification and processing of sensor signals.
1. **Power switch module**: This MOSFET can be used in power switch modules to achieve efficient switching and regulation of power. It is suitable for portable devices, power management systems, and low-voltage power applications.
2. **Battery protection module**: In applications where the battery needs to be protected from over-discharge and over-charge, the 2SJ179-VB can be used in battery protection circuits to ensure safe operation of the battery.
3. **Low noise amplifier**: Due to its low threshold voltage and low on-resistance, the 2SJ179-VB can be used in the input stage of a low noise amplifier to help achieve high-performance audio amplification.
4. **Analog switch module**: In analog circuits that require high-performance analog switches, this MOSFET can be used for analog switching and signal conditioning.
5. **Sensor interface module**: The 2SJ179-VB can be used in sensor interface modules to achieve efficient amplification and processing of sensor signals.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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