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VBA3316D Product details

Product introduction:

VBA3316D is a half-bridge N+N type field effect transistor. This product uses trench technology and is packaged in SOP8.

VBA3316D can provide stable and reliable power output, and has low on-resistance and efficient power conversion characteristics. It is suitable for use in power control and drive modules that require high performance and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Half-Bridge-N+N 30V 20(±V) 1.7V 8A 12 (mΩ) 8 (mΩ) Trench
parameter:
- MOSFET type: Half-Bridge N+N
- Rated drain-source voltage (VDS): 30V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Static operating resistance (RDS(on)):
- When VGS=4.5V: 12m次
- When VGS=10V: 8m次
- Rated drain current (ID): 8A
- Technology: Trench
Package: SOP8

Domain and module applications:

Application introduction:
This product is suitable for half-bridge drive circuits and is commonly used in the following application scenarios:
1. Power switch module: used in power switch modules such as DC-DC converters and switching power supplies to achieve efficient energy consumption and stable power output.
2. Electric vehicle control module: used in the drive system of electric vehicles, including motor control, inverter and other modules to achieve high performance and efficiency of electric vehicles.
3. Power management module: used in various power management systems, including chargers, inverters and other modules to achieve stable power output and efficient energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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