NCE0103M-VB Product details
Product introduction:
Application Introduction:
NCE0103M-VB is an N-channel MOSFET suitable for electronic applications requiring high-performance power switching.
NCE0103M-VB has an N-channel and is suitable for applications requiring an N-channel MOSFET to achieve high-performance power switching. In actual applications, be sure to comply with the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | 125(mΩ) | 102(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Silkscreen: VBI1101M
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 100V
- Maximum continuous current: 3.1A
- Static on resistance (RDS(ON)): 126mΩ @ 10V, 139mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): 1.7V
- Package type: SOT89-3
Domain and module applications:
1. **Power switch module**: This MOSFET can be used in power switch modules to achieve efficient switching and regulation of power. It is suitable for portable devices, power management systems, and low-voltage power applications.
2. **Battery protection module**: In applications where the battery needs to be protected from over-discharge and over-charge, the NCE0103M-VB can be used in battery protection circuits to ensure safe operation of the battery.
3. **DC-DC converter**: In DC-DC converters that require high efficiency, this MOSFET can be used to help achieve voltage step-up and step-down and power conversion. It is suitable for portable devices, communication equipment, and industrial applications.
4. **Motor drive module**: The NCE0103M-VB can be used in motor drive and control modules, including DC motors, stepper motors, and brushless DC motor drives.
5. **Current control module**: In applications that require high-performance current control, this MOSFET can be used in current sensor and current amplifier modules.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image