IRFU9024NPBF-VB Product details
Product introduction:
Application Introduction:
IRFU9024NPBF-VB is a P-channel MOSFET suitable for a variety of electronic applications
The characteristics of IRFU9024NPBF-VB make it suitable for a variety of medium-power electronic applications, especially when a P-channel MOSFET is required. However, when selecting and using this device, it is still necessary to understand its data sheet and performance parameters in detail to ensure that it meets the requirements of a specific application.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | 80(mΩ) | 66(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Silkscreen: VBFB2610N
Brand: VBsemi
Parameters:
- Type: P-channel
- Maximum withstand voltage: -60V
- Maximum current: -25A
- Static on resistance (RDS(ON)): 66mΩ @ 10V, 80mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): -1.43V
- Package type: TO251
Domain and module applications:
1. Power modules: This MOSFET can be used for power switches in power modules to help improve the efficiency of power management, suitable for portable devices, embedded systems and power inverters.
2. DC-DC converters: The IRFU9024NPBF-VB can be used in DC-DC converters to convert one voltage to another, suitable for battery-powered devices, electronic terminals and communication equipment.
3. Battery management: It can also be used in battery management systems to control the charging and discharging of batteries to ensure battery safety and performance.
4. Automotive electronics: Due to its low on-resistance and voltage characteristics, this MOSFET is also suitable for automotive electronic systems such as vehicle power management and drive control.
5. Low-power electronics: Due to its low on-resistance and low voltage characteristics, it is suitable for electronic devices that require low-power operation, such as sensor nodes, portable medical devices and wireless communication modules.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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