FU9024N-VB Product details
Product introduction:
Regenerated detailed parameter description and application introduction:
FU9024N-VB is a P-Channel trench MOSFET, using TO251 package. Its main parameters include -60V rated voltage, -25A rated current, and on-state resistance at different gate-source voltages.
**Detailed parameter description:**
1. **Rated voltage (V):** -60V - This means that the device can work normally at a voltage of -60V. This is a P-Channel MOSFET, so its rated voltage is negative.
2. **Rated current (A):** -25A - This means that the maximum current that the device can withstand is -25 amperes.
3. **On-state resistance (RDS(ON)):** 66mΩ @ VGS=10V,
--VGS=±20V - This indicates the resistance of the device in the on state at different gate-source voltages. In this example, when the gate-source voltage is 10V or ±20V, the on-resistance is 66 milliohms.
4. **Threshold Voltage (Vth):** -1.43V - This is the threshold voltage of the device, i.e. the gate-source voltage at which the MOSFET starts to conduct.
**Application Introduction:*
FU9024N-VB is a medium-power P-Channel MOSFET suitable for various power and switching circuit applications requiring medium current and low on-resistance, especially in applications requiring lower rated voltage and low power, such as power switches, motor drives, power modules and LED drivers.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | 80(mΩ) | 66(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Silkscreen: VBFB2610N
Brand: VBsemi
Parameters:
- Package: TO251
- Channel type: P—Channel
- Rated voltage(V): -60V
- Rated current(A): -25A
- On-state resistance(RDS(ON)): 66mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage(Vth): -1.43V
Package: TO251
Domain and module applications:
1. **Power switch:** Suitable for power switch circuits, such as DC-DC converters.
2. **Motor drive:** Due to its medium rated current, it can be used for small motor drive circuits, such as fan drives, small power tools, etc.
3. **Power module:** Suitable for designing small power supply modules and providing efficient power supply solutions.
4. **LED drive:** In LED lighting systems, it can be used for P-Channel MOSFET drive circuits.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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