IRFUC20PBF-VB Product details
Product introduction:
**Application Introduction:**
IRFUC20PBF-VB is an N-Channel MOSFET in TO251 package. It has high voltage (650V) and moderate current capacity (2A), suitable for medium power electronic modules.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Brand:** VBsemi
- **Model:** IRFUC20PBF-VB
- **Silkscreen:** VBFB165R02
- **Package:** TO251
- **Type:** N-Channel trench MOSFET
- **Voltage level:** 650V
- **Current level:** 2A
- **On-resistance (RDS(ON)):** 4300mΩ @ VGS=10V, ;
VGS=30V
- **Gate-source voltage threshold (Vth):** 2V
Domain and module applications:
1. **Power switch:** Used for medium power power switch, such as power inverter.
2. **Motor drive:** As part of the motor controller, it provides high voltage switching control for the motor.
3. **Inverter:** In the inverter circuit, the DC power is converted to AC power.
**Function:**
- Provide effective power control in medium power switch.
- As part of the motor controller, it realizes high voltage switching control for the motor.
- Realize DC to AC conversion in the inverter circuit.
**Precautions for use:**
1. **Voltage and current limit:** Do not exceed the specified voltage and current limits to avoid damage to the device.
2. **Heat dissipation:** In high power applications, appropriate heat dissipation measures are required to ensure that the device is within the normal operating temperature range.
3. **Anti-static measures:** Take anti-static measures during handling and installation to prevent damage to the device caused by electrostatic discharge.
The above is a brief description. The specific design and application needs to be carried out according to the specific module and circuit requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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