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IRFU014PBF-VB Product details

Product introduction:



Application Introduction:
IRFU014PBF-VB is an N-channel field effect transistor (MOSFET) with high rated voltage and current carrying capacity. It is suitable for fields that require high voltage and high current switching, such as power switching, motor control and industrial applications.

Detailed parameter description:
1. **Type**: This is an N-channel MOSFET, which means that it turns on when the input positive voltage. This type of MOSFET is usually used in switching and regulation circuits.

2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is 60V. This means that under normal operating conditions, its voltage can reach 60V.

3. **Maximum continuous current (Id)**: The maximum current carrying capacity of this MOSFET is 25A. This enables it to handle high current loads.

4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 32mΩ, indicating relatively low power consumption in the on state.

5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of the MOSFET is ±20V, which means that a voltage of up to ±20V is required to control its on state.

6. **Threshold voltage (Vth)**: The threshold voltage of this MOSFET is 2.4V. This is the gate-source voltage that starts the MOSFET on.

7. **Package**: This MOSFET adopts TO251 package, which is a common power package type suitable for high-power electronic applications.



This N-channel MOSFET is suitable for electronic modules and equipment that require high voltage and high current switching, providing power control and current management functions, especially in high power and industrial applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 60V 1.7V 35A 37(mΩ) 32(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 60V 1.7V 35A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 60V 1.7V 35A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
Model: IRFU014PBF-VB
Silkscreen: VBFB1630
Brand: VBsemi
Parameters:
- Type: N-channel
- Rated voltage (Vds): 60V
- Maximum continuous current (Id): 25A
- On-resistance (RDS(ON)): 32mΩ @ 10V
- Gate-source voltage range (Vgs): ±20V (positive and negative)
- Threshold voltage (Vth): 2.4V
- Package: TO251

Domain and module applications:

Applications:
IRFU014PBF-VB is a MOSFET suitable for a variety of electronic modules and devices that require high voltage and high current switching, including but not limited to the following modules:

1. **Power switch**: Can be used for high voltage switching power supplies, such as voltage conversion and power stabilization.

2. **Motor control**: Used in motor controllers to control the speed and direction of motors, especially for industrial motors.

3. **Power inverter**: Used in inverter circuits to convert DC to AC, such as solar inverters and power inverters.

4. **High voltage power management**: Used in high voltage power management and current control circuits, such as industrial control systems.

5. **Power tools**: In power tools that require high power and high efficiency, such as electric drills and electric saws.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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