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AP4525GEH-VB Product details
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Detailed parameter description:
AP4525GEH-VB is a metal oxide semiconductor field effect transistor (MOSFET) device with N+P channel, which can control positive and negative voltages at the same time, with a rated voltage of ±40V and a maximum continuous current of 50A / -50A. Its RDS(ON) performs well at different voltages, which are 15mΩ @ 10V and 18.75mΩ @ 4.5V respectively. The threshold voltage (Vth) is ±1V.
TO252-5 package makes it easy to integrate into various electronic devices and circuits. This type of MOSFET has low on-resistance and high current carrying capacity, which can provide excellent performance and high efficiency. It is suitable for applications requiring high power switching, especially circuit designs that need to control positive and negative voltages at the same time.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 14/14(mΩ) | 16/16(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Model: AP4525GEH-VB
Silkscreen: VBE5415
Brand: VBsemi
Parameters:
- Channel type: N+P channel
- Rated voltage: ±40V
- Maximum continuous current: 50A / -50A
- Static on-resistance (RDS(ON)): 15mΩ @ 10V, 18.75mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): ±1V
- Package: TO252-5
Silkscreen: VBE5415
Brand: VBsemi
Parameters:
- Channel type: N+P channel
- Rated voltage: ±40V
- Maximum continuous current: 50A / -50A
- Static on-resistance (RDS(ON)): 15mΩ @ 10V, 18.75mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): ±1V
- Package: TO252-5
Domain and module applications：
AP4525GEH-VB is commonly used in power management, power switching and power converter applications, and is particularly suitable for circuits that require simultaneous control of positive and negative voltages. The N+P channel characteristics make it very suitable for modules in various fields such as power switches, power inverters, power converters, motor control, battery protection circuits, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
