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SQD19P06-60L-GE3-VB Product details
Back to previous pageProduct introduction：
This model SQD19P06-60L-GE3-VB is a P-channel MOSFET transistor suitable for a variety of applications. The following is a detailed parameter description and application introduction of this product:
**Detailed parameter description:**
- Maximum withstand voltage: -60V, indicating that it can withstand a voltage of no more than 60 volts.
- Maximum current: -22A, this MOSFET can withstand a current of up to 22 amperes.
- On-state resistance: Under different voltages, its on-state resistance is 48 milliohms (@ 10V) and 57 milliohms (@ 4.5V). This shows that it has a relatively low resistance in the on state.
- Threshold voltage: -1.5V, indicating that the MOSFET starts to turn on at this voltage.
SQD19P06-60L-GE3-VB is a versatile P-channel MOSFET suitable for a variety of electronic applications, mainly used for current control and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 58(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Model: SQD19P06-60L-GE3-VB
Silkscreen: VBE2658
Brand: VBsemi
Parameters:
- P-channel
- Maximum withstand voltage: -60V
- Maximum current: -22A
- On-state resistance: 48mΩ @ 10V, 57mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage: -1.5V
Package: TO252
Silkscreen: VBE2658
Brand: VBsemi
Parameters:
- P-channel
- Maximum withstand voltage: -60V
- Maximum current: -22A
- On-state resistance: 48mΩ @ 10V, 57mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage: -1.5V
Package: TO252
Domain and module applications：
This MOSFET (SQD19P06-60L-GE3-VB) is suitable for circuit modules in multiple fields, mainly used for current control, voltage switching and power amplification. Specific applications include but are not limited to the following fields:
1. **Power management module:** Used for switching power supplies, voltage stabilization circuits and power switches, which helps to achieve efficient energy management.
2. **Motor control:** As part of a motor driver or motor control module, it is used for current control and voltage switching.
3. **Power inverter:** In the inverter, it can be used to convert DC to AC, suitable for solar inverters, electric vehicle chargers, etc.
4. **Power switch and protection:** Used for power switching, short circuit protection and overcurrent protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
