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TJ30S06M3L-VB Product details
Back to previous pageProduct introduction：
Application introduction:
TJ30S06M3L (silk screen: VBE2625) is a P-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction:
Detailed parameter description:
TJ30S06M3L is a P-channel power MOSFET with high voltage and current carrying capacity. The main parameters include rated voltage of -60V, rated current of -50A, RDS(ON) of 20mΩ @ 10V, 25mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage of -1.76V, and package type of TO252.
TJ30S06M3L (VBE2625) is a P-channel power MOSFET suitable for modules in the fields of power management modules, motor drives and automotive electronic systems. It has high voltage and current carrying capacity and is suitable for circuits requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 25(mΩ) | 20(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Model: TJ30S06M3L
Silkscreen: VBE2625
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -60V
- Rated current: -50A
- RDS(ON): 20mΩ @ 10V, 25mΩ @ 4.5V
- Gate-source voltage range: ±20V
- Gate-source threshold voltage: -1.76V
- Package type: TO252
Silkscreen: VBE2625
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -60V
- Rated current: -50A
- RDS(ON): 20mΩ @ 10V, 25mΩ @ 4.5V
- Gate-source voltage range: ±20V
- Gate-source threshold voltage: -1.76V
- Package type: TO252
Domain and module applications：
Application fields:
TJ30S06M3L (VBE2625) is suitable for a variety of fields and application scenarios, mainly used in circuits that require high voltage and high current carrying capacity of P-channel power MOSFET. The following are some typical application fields:
1. Power management module: TJ30S06M3L can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system.
2. Motor drive: It can be used in motor drive circuits to provide high power and high efficiency power output, suitable for motor drive in industrial automation and mechanical equipment.
3. Automotive electronic systems: TJ30S06M3L is suitable for power management, motor drive and lighting control in automotive electronic systems, meeting the requirements for high voltage and high power.
TJ30S06M3L (VBE2625) is suitable for a variety of fields and application scenarios, mainly used in circuits that require high voltage and high current carrying capacity of P-channel power MOSFET. The following are some typical application fields:
1. Power management module: TJ30S06M3L can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system.
2. Motor drive: It can be used in motor drive circuits to provide high power and high efficiency power output, suitable for motor drive in industrial automation and mechanical equipment.
3. Automotive electronic systems: TJ30S06M3L is suitable for power management, motor drive and lighting control in automotive electronic systems, meeting the requirements for high voltage and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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