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RJJ0606JPD-VB Product details
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Model: RJJ0606JPD-VB
Silkscreen: VBE2625
Brand: VBsemi
Parameters: TO-252; P-Channel, -60V; -50A; RDS(ON)=20mΩ @ VGS=10V,
--VGS=±20V; Vth=-1.76V;
Package: TO-252
**Application Introduction:**
This P-Channel MOSFET is suitable for electronic modules in various fields, especially in situations where current control is required.
**Precautions for use:**
- Make sure the operating voltage does not exceed -60V when using.
- Note that the threshold voltage is -1.76V, and ensure that it is driven within the appropriate voltage range.
- According to the parameters provided in the data sheet, select the appropriate drive voltage (VGS) to achieve the required performance.
- Avoid exceeding the maximum rated current and power to ensure component reliability and long life.
Please note that the specific application depends on the design needs and circuit requirements. In integrated circuit design and electronic product manufacturing, engineers will select appropriate components based on specific technical specifications and performance requirements.
Silkscreen: VBE2625
Brand: VBsemi
Parameters: TO-252; P-Channel, -60V; -50A; RDS(ON)=20mΩ @ VGS=10V,
--VGS=±20V; Vth=-1.76V;
Package: TO-252
**Application Introduction:**
This P-Channel MOSFET is suitable for electronic modules in various fields, especially in situations where current control is required.
**Precautions for use:**
- Make sure the operating voltage does not exceed -60V when using.
- Note that the threshold voltage is -1.76V, and ensure that it is driven within the appropriate voltage range.
- According to the parameters provided in the data sheet, select the appropriate drive voltage (VGS) to achieve the required performance.
- Avoid exceeding the maximum rated current and power to ensure component reliability and long life.
Please note that the specific application depends on the design needs and circuit requirements. In integrated circuit design and electronic product manufacturing, engineers will select appropriate components based on specific technical specifications and performance requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 25(mΩ) | 20(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description and application introduction:
- **Model:** RJJ0606JPD-VB
- **Silkscreen:** VBE2625
- **Brand:** VBsemi
- **Package:** TO-252
**Main parameters:**
- **Channel type:** P-Channel
- **Maximum withstand voltage:** -60V
- **Maximum current:** -50A
- **On-resistance (RDS(ON)):** 20mΩ @ VGS=10V,
--VGS=±20V
- **Threshold voltage (Vth):** -1.76V
- **Model:** RJJ0606JPD-VB
- **Silkscreen:** VBE2625
- **Brand:** VBsemi
- **Package:** TO-252
**Main parameters:**
- **Channel type:** P-Channel
- **Maximum withstand voltage:** -60V
- **Maximum current:** -50A
- **On-resistance (RDS(ON)):** 20mΩ @ VGS=10V,
--VGS=±20V
- **Threshold voltage (Vth):** -1.76V
Domain and module applications：
Here are some possible application areas:
1. **Power modules:** Suitable for power switching, power management, and other power circuits that require P-Channel MOSFETs.
2. **Battery management systems:** Due to its performance under low voltage conditions, it is suitable for battery charge and discharge management systems that require P-Channel MOSFETs.
3. **Low power devices:** Due to its low on-resistance and low threshold voltage, it is suitable for electronic devices that require low power consumption.
4. **Power inverters:** Used in power inverters to convert DC power to AC power, commonly found in solar and battery applications.
1. **Power modules:** Suitable for power switching, power management, and other power circuits that require P-Channel MOSFETs.
2. **Battery management systems:** Due to its performance under low voltage conditions, it is suitable for battery charge and discharge management systems that require P-Channel MOSFETs.
3. **Low power devices:** Due to its low on-resistance and low threshold voltage, it is suitable for electronic devices that require low power consumption.
4. **Power inverters:** Used in power inverters to convert DC power to AC power, commonly found in solar and battery applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
