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50P06-VB Product details
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Detailed parameter description:
50P06-VB is a P-channel MOSFET designed for low voltage, high current applications. It is rated at -60V and can withstand currents up to -50A continuously. The MOSFET has excellent conduction characteristics, with a static on-resistance of 20mΩ at 10V and 25mΩ at 4.5V. This low resistance helps reduce power consumption and heat, making it suitable for applications that require efficient energy consumption.
50P06-VB has a wide range of gate-source voltage (Vgs), up to ±±20V, and good control characteristics. Its threshold voltage (Vth) is -1.76V, which can achieve precise control in different applications.
50P06-VB is a versatile P-channel MOSFET suitable for a variety of low voltage, high current applications, providing high performance and reliability solutions for modules such as power management, motor control and DC-DC converters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 25(mΩ) | 20(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Model: 50P06-VB
Silkscreen: VBE2625
Brand: VBsemi
Parameters:
- P-channel MOSFET
- Rated voltage: -60V
- Maximum continuous current: -50A
- Static on-resistance (RDS(ON)): 20mΩ @ 10V, 25mΩ @ 4.5V
- Gate-source voltage (Vgs): Maximum ±±20V
- Threshold voltage (Vth): -1.76V
Package: TO252
Silkscreen: VBE2625
Brand: VBsemi
Parameters:
- P-channel MOSFET
- Rated voltage: -60V
- Maximum continuous current: -50A
- Static on-resistance (RDS(ON)): 20mΩ @ 10V, 25mΩ @ 4.5V
- Gate-source voltage (Vgs): Maximum ±±20V
- Threshold voltage (Vth): -1.76V
Package: TO252
Domain and module applications：
50P06-VB is widely used in the following fields and modules:
1. **Power Management Module**: This MOSFET is suitable for low voltage power management for battery management, charge and discharge control, and power factor correction.
2. **Motor Drive**: Due to its high current carrying capacity, it can be used for motor control, such as electric vehicle motor control, industrial motor drive, etc.
3. **DC-DC Converter**: The low on-resistance and high efficiency performance of 50P06-VB make it an ideal choice for DC-DC converters, which can be used in power adapters and energy converters.
4. **Power Switch**: Suitable for various types of power switches, such as power switch modules (PSU) and inverters.
1. **Power Management Module**: This MOSFET is suitable for low voltage power management for battery management, charge and discharge control, and power factor correction.
2. **Motor Drive**: Due to its high current carrying capacity, it can be used for motor control, such as electric vehicle motor control, industrial motor drive, etc.
3. **DC-DC Converter**: The low on-resistance and high efficiency performance of 50P06-VB make it an ideal choice for DC-DC converters, which can be used in power adapters and energy converters.
4. **Power Switch**: Suitable for various types of power switches, such as power switch modules (PSU) and inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
