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NTD2955T4G-VB Product details
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Application introduction:
NTD2955T4G (silk screen: VBE2610N) is a P-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction:
Detailed parameter description:
NTD2955T4G is a high-voltage, high-current carrying capacity P-channel power MOSFET. The main parameters include rated voltage of -60V, rated current of -38A, RDS(ON) of 61mΩ @ 10V, 72mΩ @ 4.5V, gate-source voltage range of ±±20V, gate-source threshold voltage of -1.3V, and package type of TO252.
NTD2955T4G (VBE2610N) is a P-channel power MOSFET suitable for power management modules, power tools, automotive electronic systems, battery management systems, electric vehicle charging piles, industrial automation and communication equipment. It has high voltage, high current carrying capability and is suitable for circuits requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100(mΩ) | 90(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Model: NTD2955T4G
Silkscreen: VBE2610N
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -60V
- Rated current: -38A
- RDS(ON): 90mΩ @ 10V, 100mΩ @ 4.5V
- Gate-source voltage range: ±±20V
- Gate-source threshold voltage: -1.3V
- Package type: TO252
Domain and module applications：
Application areas:
NTD2955T4G (VBE2610N) is suitable for a variety of fields and application scenarios, especially for high-voltage and high-current circuits that require P-channel power MOSFETs. The following are some typical application areas:
1. Power management module: NTD2955T4G can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system.
2. Power tools and automotive electronic systems: It is suitable for drive and control circuits in power tools and automotive electronic systems to achieve high power and high efficiency power output.
3. Battery management system: NTD2955T4G can be used in the charge and discharge control circuit in the battery management system, providing high efficiency and reliable battery management capabilities.
4. Electric vehicle charging pile: NTD2955T4G is suitable for the switching circuit in the electric vehicle charging pile, providing high efficiency power conversion and stable current control.
5. Industrial automation and communication equipment: NTD2955T4G is suitable for switching circuits in industrial automation and communication equipment, providing power management and current control functions.
Technical support：
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