NTD20P06LT4G-VB Product details
Product introduction:
NTD20P06LT4G (silk screen: VBE2610N) is a P-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction:
Detailed parameter description:
NTD20P06LT4G is a P-channel power MOSFET with high power and low on-resistance. The main parameters include rated voltage of -60V, rated current of -38A, RDS(ON) of 90mΩ @ 10V, 100mΩ @ 4.5V, gate-source voltage range of ±±20V, gate-source threshold voltage of -1.3V, and package type of TO252.
NTD20P06LT4G (VBE2610N) is a P-channel power MOSFET suitable for modules in the fields of power management modules, motor drives and automotive electronic systems. It has the characteristics of high power and low on-resistance, and is suitable for circuits that require high power and high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100(mΩ) | 90(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Model: NTD20P06LT4G
Parameters:
- Channel type: P-channel
- Rated voltage: -60V
- Rated current: -30A
- RDS(ON): 90mΩ @ 10V, 100mΩ @ 4.5V
- Gate-source voltage range: ±20V
- Gate-source threshold voltage: -1.7V
- Package type: TO252
Domain and module applications:
Application fields:
NTD20P06LT4G (VBE2610N) is suitable for a variety of fields and application scenarios, mainly used in P-channel MOSFET circuits that require high power and low on-resistance. The following are some typical application fields:
1. Power management module: NTD20P06LT4G can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system.
2. Motor drive: It can be used in motor drive circuits to provide high power and high-efficiency power output, suitable for motor drive in industrial automation and mechanical equipment.
3. Automotive electronic systems: NTD20P06LT4G is suitable for power management, motor drive and lighting control in automotive electronic systems, meeting the requirements of automotive electronic systems for high power and high efficiency.
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