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FDD5614P-VB Product details

Product introduction:

FDD5614P is a P-channel MOSFET suitable for negative voltage control or load switch applications. Its maximum withstand voltage is -60V, maximum current is -38A, with low on-resistance and high performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 100(mΩ) 90(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P

Detailed parameter description:
- Type: P-channel MOSFET
- Maximum withstand voltage: -60V
- Maximum current: -30A
- On-resistance: 90mΩ @10V, 100mΩ @4.5V
- Gate-source voltage: ±20Vgs (±V)
- Gate threshold voltage: -1.7Vth
- Package: TO252

Domain and module applications:


The device is suitable for module design in multiple fields, mainly including:

1. Power management module: can be used for circuits of negative power switch and positive and negative power control.
2. Motor drive module: suitable for controllers driving small DC motors or stepper motors.
3. Converter module: can be used for output regulation of DC-DC converters and inverters.

In short, FDD5614P is suitable for module design in application fields such as negative voltage control and load switching, including power management, motor drive and converter modules.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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