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2SJ485-VB Product details
Back to previous pageProduct introduction：
Application Introduction:
2SJ485-VB is a P-channel metal oxide semiconductor field effect transistor (MOSFET) with high voltage and current carrying capacity, low drain-source resistance and stable gate-source threshold voltage. These characteristics make it widely used in modules in various electronic fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100(mΩ) | 90(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Model: 2SJ485-VB
Silkscreen: VBE2610N
Brand: VBsemi
Parameter description:
- Channel type: P-channel
- Rated voltage: -60V
- Maximum current: -38A
- Static drain-source resistance (RDS(ON)): 90mΩ@10V, 100mΩ@4.5V
- Gate-source voltage (±Vgs): ±20V
- Gate-source threshold voltage (Vth): -1.3V
- Package type: TO252
Domain and module applications：
Application areas:
1. Power modules: 2SJ485-VB can be used in medium to high power power switch modules to provide power conversion and voltage regulation functions. Suitable for various electronic devices, communication equipment and industrial equipment.
2. Motor control: In motor control modules, it can be used for motor drive and current control, suitable for electric vehicles, robots and industrial automation.
3. Power inverter: It can also be used in inverter circuits to convert DC power to AC power, suitable for solar inverters, electric vehicle inverters and UPS systems.
4. High current switch: 2SJ485-VB can be used in high current switch modules such as power distribution, current protection and switch control.
In short, 2SJ485-VB is a high-performance P-channel MOSFET suitable for electronic modules in multiple fields, providing power management, current control, signal amplification and inversion functions.
Technical support：
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