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2SJ182S-VB Product details
Back to previous pageProduct introduction：
2SJ182S-VB is a P-Channel MOSFET in TO252 package. Its main parameters include -60V rated voltage, -38A rated current, and on-state resistance at different gate-source voltages.
**Detailed parameter description:**
1. **Rated voltage (V):** -60V - This means that the device can work normally at a voltage of -60V. This is a P-Channel MOSFET, so its rated voltage is negative.
2. **Rated current (A):** -38A - This means that the maximum current that the device can withstand is -38 amperes.
3. **On-state resistance (RDS(ON)):** 61mΩ @ VGS=10V,
--VGS=±20V - This indicates the resistance of the device in the on state at different gate-source voltages. In this example, when the gate-to-source voltage is 10V or ±20V, the on-state resistance is 61 milliohms.
4. **Threshold Voltage (Vth):** -1.3V - This is the threshold voltage of the device, i.e. the gate-to-source voltage at which the MOSFET starts to conduct.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100(mΩ) | 90(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Model: 2SJ182S-VB
Brand: VBsemi
Parameters:
- VDS(V): -60V
--VGS=±20V
- Threshold voltage(Vth): -1.7V
- ID(A): -30A
- On-state resistance(RDS(ON)): 100mΩ @ VGS=4.5V,
- On-state resistance(RDS(ON)): 90mΩ @ VGS=10V
Domain and module applications：
2SJ182S-VB is suitable for power supply and switching circuits in various fields, including but not limited to:
1. **Audio amplifier:** Due to its P-Channel channel characteristics, it is suitable for audio amplifier circuits.
2. **Power switch:** Used in power switching circuits, such as DC-DC converters.
3. **Battery management:** Can be used in portable devices and battery-powered systems to effectively control current and voltage.
4. **Audio amplifier:** Due to its low on-resistance, it is suitable for audio amplifiers that require high current and low distortion.
In general, 2SJ182S-VB is a medium-power P-Channel MOSFET, suitable for various power supply and switching circuit applications that require medium current and low on-resistance, especially in situations where lower rated voltage and medium power are required, such as audio amplifiers, power management, battery management and other fields.
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