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UTT50P04L-TN3-R-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi UTT50P04L-TN3-R-VB is a P-Channel MOSFET, branded as VBsemi. It has a drain-source voltage (VDS) of -40V, a drain current (ID) of -65A, an on-resistance (RDS(ON)) of 12mΩ when the gate-source voltage (VGS) is 10V and ±20V respectively, and a threshold voltage (Vth) of -1.6V. The device is packaged in TO252.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | 15(mΩ) | 12(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
### Detailed parameter description:
- **Model: ** UTT50P04L-TN3-R-VB
- **Brand: ** VBsemi
- **Channel type: ** P-Channel
- **VDS (drain-source voltage): ** -40V
- **ID (drain current): ** -65A
- **RDS(ON) (on-resistance): ** 12mΩ @ VGS=10V; ±20V
- **Vth (threshold voltage): ** -1.6V
- **Package: ** TO252
- **Model: ** UTT50P04L-TN3-R-VB
- **Brand: ** VBsemi
- **Channel type: ** P-Channel
- **VDS (drain-source voltage): ** -40V
- **ID (drain current): ** -65A
- **RDS(ON) (on-resistance): ** 12mΩ @ VGS=10V; ±20V
- **Vth (threshold voltage): ** -1.6V
- **Package: ** TO252
Domain and module applications：
### Applications and Module Examples:
1. **Power Management Module:** UTT50P04L-TN3-R-VB can be used for low voltage drop and high efficiency power switch, suitable for power management module.
2. **Battery Protection:** In battery powered system, UTT50P04L-TN3-R-VB can be used for battery protection circuit to prevent over discharge and over charge.
3. **DC Motor Drive:** Due to its low on resistance and high drain-source voltage, this device is suitable for DC motor drive module to improve efficiency and reduce heat generation.
4. **LED Lighting Control:** As part of LED lighting control module, UTT50P04L-TN3-R-VB can be used for power switch to achieve brightness adjustment and on/off control of LED lamp.
The above examples only represent some of the potential uses of UTT50P04L-TN3-R-VB in various application fields and modules.
1. **Power Management Module:** UTT50P04L-TN3-R-VB can be used for low voltage drop and high efficiency power switch, suitable for power management module.
2. **Battery Protection:** In battery powered system, UTT50P04L-TN3-R-VB can be used for battery protection circuit to prevent over discharge and over charge.
3. **DC Motor Drive:** Due to its low on resistance and high drain-source voltage, this device is suitable for DC motor drive module to improve efficiency and reduce heat generation.
4. **LED Lighting Control:** As part of LED lighting control module, UTT50P04L-TN3-R-VB can be used for power switch to achieve brightness adjustment and on/off control of LED lamp.
The above examples only represent some of the potential uses of UTT50P04L-TN3-R-VB in various application fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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