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UT30P04G-TN3-R-VB Product details
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### Product Introduction
**Product Model: UT30P04G-TN3-R-VB**
**Silkscreen Code: VBE2412**
**Brand: VBsemi**
UT30P04G-TN3-R-VB is a high-performance P-Channel power MOSFET designed for efficient power management and drive applications. Its features include low on-resistance, high current carrying capacity and low gate drive voltage. It is packaged in TO252, suitable for surface mount technology, and easy to design and install circuit boards. UT30P04G-TN3-R-VB is widely used in various electronic devices.
UT30P04G-TN3-R-VB's excellent electrical properties and wide range of applications make it an ideal choice for various electronic equipment and system designs. Its reliability and performance stability provide users with high-efficiency and high-reliability solutions.
**Product Model: UT30P04G-TN3-R-VB**
**Silkscreen Code: VBE2412**
**Brand: VBsemi**
UT30P04G-TN3-R-VB is a high-performance P-Channel power MOSFET designed for efficient power management and drive applications. Its features include low on-resistance, high current carrying capacity and low gate drive voltage. It is packaged in TO252, suitable for surface mount technology, and easy to design and install circuit boards. UT30P04G-TN3-R-VB is widely used in various electronic devices.
UT30P04G-TN3-R-VB's excellent electrical properties and wide range of applications make it an ideal choice for various electronic equipment and system designs. Its reliability and performance stability provide users with high-efficiency and high-reliability solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | 15(mΩ) | 12(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
### Product parameters
- **Channel type**: P-Channel
- **Maximum drain-source voltage (V\_DS)**: -40V
- **Maximum continuous drain current (I\_D)**: -65A
- **On-resistance (R\_DS(ON))**: 12mΩ @ V\_GS = 10V
- **Maximum gate-source voltage (V\_GS)**: ±±20V
- **Threshold voltage (V\_th)**: -1.6V
- **Package type**: TO252
- **Brand**: VBsemi
- **Channel type**: P-Channel
- **Maximum drain-source voltage (V\_DS)**: -40V
- **Maximum continuous drain current (I\_D)**: -65A
- **On-resistance (R\_DS(ON))**: 12mΩ @ V\_GS = 10V
- **Maximum gate-source voltage (V\_GS)**: ±±20V
- **Threshold voltage (V\_th)**: -1.6V
- **Package type**: TO252
- **Brand**: VBsemi
Domain and module applications：
### Application fields and module examples
1. **Power management module**: UT30P04G-TN3-R-VB is suitable for various power management modules, such as switching power supply (SMPS) and DC-DC converter (DC-DC Converter). Its low on-resistance and high current carrying capacity help improve power conversion efficiency and system reliability.
2. **Battery management system (BMS)**: This MOSFET can be used in charging and discharging control modules in battery management systems. Its high current carrying capacity and low on-resistance help improve battery performance and service life.
3. **Motor drive control**: UT30P04G-TN3-R-VB is suitable for motor drive control modules, such as brushless DC motor (BLDC) drivers. Its high current carrying capacity and low on-resistance help improve motor control accuracy and efficiency.
4. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used in various control modules, such as headlight control, power window control, and seat control. Its high performance and reliability make it suitable for various applications in the automotive environment.
5. **Industrial Automation**: UT30P04G-TN3-R-VB is suitable for various load control modules in industrial automation control systems. Its high withstand voltage and high current carrying capacity can adapt to various application scenarios in the industrial environment.
1. **Power management module**: UT30P04G-TN3-R-VB is suitable for various power management modules, such as switching power supply (SMPS) and DC-DC converter (DC-DC Converter). Its low on-resistance and high current carrying capacity help improve power conversion efficiency and system reliability.
2. **Battery management system (BMS)**: This MOSFET can be used in charging and discharging control modules in battery management systems. Its high current carrying capacity and low on-resistance help improve battery performance and service life.
3. **Motor drive control**: UT30P04G-TN3-R-VB is suitable for motor drive control modules, such as brushless DC motor (BLDC) drivers. Its high current carrying capacity and low on-resistance help improve motor control accuracy and efficiency.
4. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used in various control modules, such as headlight control, power window control, and seat control. Its high performance and reliability make it suitable for various applications in the automotive environment.
5. **Industrial Automation**: UT30P04G-TN3-R-VB is suitable for various load control modules in industrial automation control systems. Its high withstand voltage and high current carrying capacity can adapt to various application scenarios in the industrial environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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