STU417L-VB Product details
Product introduction:
**Product Introduction:**
STU417L-VB is a P-Channel MOSFET produced by VBsemi. The device has low on-resistance and high rated current capability, suitable for high-efficiency power management and various switching applications. The TO252 package provides good heat dissipation performance, ensuring stable operation of the device under high current conditions.
**Detailed parameter description:**
1. **Rated voltage (VDS):** -40V
- The device is able to handle voltages up to -40V, making it suitable for a variety of low-voltage reverse switching applications.
2. **Rated current (ID):** -65A
- With a high rated current of -65A, it is suitable for high-power applications and heavy-load switching.
3. **On-resistance (RDS(ON)):** 12mΩ @ VGS=-10V
- Low on-resistance helps reduce power consumption and improve system efficiency.
4. **Maximum gate-source voltage (VGS):** ±±20V
- Provides a wide gate-source voltage range to ensure reliable operation under different driving conditions.
5. **Threshold voltage (Vth):** -1.6V
- The lower threshold voltage ensures fast switching performance at low gate voltage.
STU417L-VB can provide excellent performance and reliability in multiple high-power applications through its excellent electrical characteristics and reliable package design.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | 15(mΩ) | 12(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Silkscreen:** VBE2412
- **Brand:** VBsemi
- **Parameters:**
- P-Channel channel
- Rated voltage: -40V
- Rated current: -65A
- On-resistance (RDS(ON)): 12mΩ @ VGS=-10V
- Maximum gate-source voltage (VGS): ±±20V
- Threshold voltage (Vth): -1.6V
- **Package:** TO252
Domain and module applications:
1. **Power management module:**
- Applicable to power management modules such as DC-DC converters, voltage regulators and power adapters, the high current handling capability and low on-resistance of STU417L-VB can improve conversion efficiency and reduce heat generation.
2. **Battery protection circuit:**
- In battery management systems, this MOSFET can be used as a protection switch to prevent overcharging or over-discharging. Its high current handling capability and reliable shutdown characteristics help protect the safety of the battery and extend its service life.
3. **Motor control:**
- Applicable to power tools and small motor control circuits, the high rated current and low on-resistance of the device ensure efficient operation and low heat generation of the motor.
4. **Load switch:**
- Can be used as a high-power load switch, such as switch control in LED lighting systems, providing efficient current switching, reducing power consumption and extending LED life.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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