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RSD160P05-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
RSD160P05-VB is a VBsemi brand P-channel field effect transistor with a single P-channel. This transistor is suitable for high-power electronic applications and adopts a TO252 package with good heat dissipation performance. It has a drain-source voltage withstand capability of -40V and a drain current withstand capability of -65A. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 12mΩ and the threshold voltage (Vth) is -1.6V.
RSD160P05-VB is a VBsemi brand P-channel field effect transistor with a single P-channel. This transistor is suitable for high-power electronic applications and adopts a TO252 package with good heat dissipation performance. It has a drain-source voltage withstand capability of -40V and a drain current withstand capability of -65A. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 12mΩ and the threshold voltage (Vth) is -1.6V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | 15(mΩ) | 12(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
**Detailed parameter description:**
- Voltage withstand capability: -40V
- Drain current withstand capability: -65A
- On-resistance (RDS(ON)):
- When VGS=10V: 12mΩ
-
--When VGS=±20V: 12mΩ
- Threshold voltage (Vth): -1.6V
- Package type: TO252
- Brand: VBsemi
- Voltage withstand capability: -40V
- Drain current withstand capability: -65A
- On-resistance (RDS(ON)):
- When VGS=10V: 12mΩ
-
--When VGS=±20V: 12mΩ
- Threshold voltage (Vth): -1.6V
- Package type: TO252
- Brand: VBsemi
Domain and module applications：
**Application fields and module examples:**
1. **Power module:** RSD160P05-VB can be used in high-power power modules such as switching power supplies and DC regulators. Its high voltage withstand capability and low on-resistance characteristics make it suitable for high-efficiency energy conversion.
2. **Motor driver:** In the fields of industrial automation and automotive electronics, high-power motors need to be precisely controlled. RSD160P05-VB can be used as a power switch in the motor driver to achieve efficient motor control and energy recovery.
3. **Battery protection system:** In lithium battery management systems, the battery charging and discharging process needs to be precisely controlled. RSD160P05-VB can be used as a power switch in the battery protection system to ensure that the battery charging and discharging process is safe and reliable.
4. **Electric vehicle charging pile:** In electric vehicle charging piles, the charging current needs to be precisely controlled. RSD160P05-VB can be used as a power switch in the charging pile to achieve efficient management of the electric vehicle charging process.
From the above examples, it can be seen that the RSD160P05-VB transistor has broad application prospects in power modules, motor drives, battery protection and electric vehicle charging piles, etc., which can improve system performance and ensure its stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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