VBA2309 Product details
Product introduction:
With parameters: VDS (drain-source voltage) is -30V, VGS (gate-source voltage) range is ±20V, threshold voltage (Vth) is -2.5V. The on-resistance is 15mΩ at VGS=4.5V, 11mΩ at VGS=10V, and the maximum drain current (ID) is -13.5A.
These MOSFETs are manufactured using Trench technology and are packaged in SOP8.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Single-P | -30V | 20(±V) | -2.5V | -13.5A | 15 (mΩ) | 11 (mΩ) | Trench |
parameter:
-Single P
- VDS(V): -30
-VGS(㊣V): 20
- Vth(V): -2.5
- VGS=4.5V(m次): 15
- VGS=10V(m次): 11
- ID (A): -13.5
- Technology: Trench
Package: SOP8
Domain and module applications:
In power management modules, these MOSFETs can be used for functions such as power switches, DC-DC converters, and power inverters. Due to their low on-resistance and high voltage tolerance, they are also suitable for use in electric vehicle drive modules in electric vehicles (EVs), hybrid electric vehicles (HEVs) and electric bicycles (e-bikes).
In addition, due to their high performance and reliability, they can also be used in motor drives and power switching units in industrial automation equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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