NTD25P03LG-VB Product details
Product introduction:
Detailed parameter description of this model:
- Type: N-channel P-MOSFET
- Maximum drain-source voltage (VDS): -30V
- Maximum drain-source current (ID): -26A
- On-resistance (RDS(ON)): 33mΩ (at 10V), 46mΩ (at 4.5V)
- Gate-source threshold voltage (Vgs(th)): -1.3V
- Maximum gate-source voltage (Vgs): ±±20V
- Package type: TO252
These trench P-MOSFETs can be used in applications such as power switching, motor drives, power inverters, and charge and discharge circuits. They provide reliable power switching functions where high efficiency and low resistance are required. By changing the gate-source voltage control resistor, they can achieve efficient power management and circuit control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 46(mΩ) | 33(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Silkscreen: VBE2338
Brand: VBsemi
Parameters:
- P-channel
- -30V voltage
- -26A current
- RDS(ON): 33mΩ@10V, 46mΩ@4.5V
- ±20Vgs(±V) threshold voltage
- -1.3Vth(V) threshold voltage
- TO252 package
Domain and module applications:
- Power management system
- Automatic control system
- Electric vehicle system
- Industrial automation control system
- LED lighting system, etc.
Technical support:
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