FDD306P-VB Product details
Product introduction:
**Application Introduction:**
FDD306P-VB is a P-Channel MOSFET in TO252 package. With negative voltage (-30V) and high current capacity (-26A), it is suitable for high-performance electronic modules that require P-Channel MOSFET.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 46(mΩ) | 33(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Brand:** VBsemi
- **Model:** FDD306P-VB
- **Silkscreen:** VBE2338
- **Package:** TO252
- **Type:** P-Channel trench MOSFET
- **Voltage level:** -30V
- **Current level:** -26A
- **On-resistance (RDS(ON)):** 33mΩ @ VGS=10V,
--VGS=±20V
- **Gate-source voltage threshold (Vth):** -1.3V
Domain and module applications:
1. **Power module:** Used in flyback power supplies and voltage regulators to provide high-efficiency power conversion.
2. **Motor control:** As part of the motor driver, it realizes effective control of the motor.
3. **Switching circuit:** Used in various switching circuits, such as switching power supplies and inverters.
**Function:**
- Provide high-efficiency power conversion.
- Realize effective control of the motor.
- Used in various switching circuits, supporting switching power supplies and inverters.
**Precautions for use:**
1. **Voltage and current limits:** Do not exceed the specified voltage and current limits to avoid damage to the device.
2. **Heat dissipation:** In high-power applications, appropriate heat dissipation measures are required to ensure that the device is within the normal operating temperature range.
3. **Anti-static measures:** Take anti-static measures during handling and installation to prevent damage to the device caused by electrostatic discharge.
The above is a brief description. The specific design and application needs to be carried out according to the specific module and circuit requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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