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SQD40P10-40L-GE3-VB Product details
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Application Introduction:
This SQD40P10-40L-GE3-VB product is a P-channel power MOSFET suitable for modules in a variety of fields. It has low resistance (low RDS(ON)) and high current characteristics, which can provide good performance in high voltage and high power applications. The device provides easy installation and thermal management in the TO252 package.
SQD40P10-40L-GE3-VB is a high-performance, low-resistance P-channel power MOSFET suitable for modules in power supplies, automotive electronics, industrial automation and renewable energy.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | 37(mΩ) | 33(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Model: SQD40P10-40L-GE3-VB
Silk screen: VBE2104N
Brand: VBsemi
Parameters: P-channel, -100V, -40A, RDS(ON), 33mΩ@10V, 36mΩ@4.5V, ±20Vgs(± V); -1.92Vth(V); TO252
Detailed parameter description:
- Model: SQD40P10-40L-GE3-VB
- Function type: P-channel power MOSFET
- Maximum voltage: -100V
- Maximum current: -40A
- On-resistance: 33mΩ @ 10V, 36mΩ @ 4.5V
- Gate-source voltage: ±±20V
- Threshold voltage: -1.92V
- Package: TO252
Silk screen: VBE2104N
Brand: VBsemi
Parameters: P-channel, -100V, -40A, RDS(ON), 33mΩ@10V, 36mΩ@4.5V, ±20Vgs(± V); -1.92Vth(V); TO252
Detailed parameter description:
- Model: SQD40P10-40L-GE3-VB
- Function type: P-channel power MOSFET
- Maximum voltage: -100V
- Maximum current: -40A
- On-resistance: 33mΩ @ 10V, 36mΩ @ 4.5V
- Gate-source voltage: ±±20V
- Threshold voltage: -1.92V
- Package: TO252
Domain and module applications：
These products are mainly used in the following modules:
- Power modules: can be used for power switches to provide stable power output.
- Automotive electronics: suitable for power switches, motor drives and other applications in automotive electronic modules.
- Industrial automation: can be used for industrial automation applications such as motor control, motor drive, switching power supply, etc.
- Renewable energy: suitable for power switches and drive applications in renewable energy devices such as solar inverters and wind power generation controllers.
- Power modules: can be used for power switches to provide stable power output.
- Automotive electronics: suitable for power switches, motor drives and other applications in automotive electronic modules.
- Industrial automation: can be used for industrial automation applications such as motor control, motor drive, switching power supply, etc.
- Renewable energy: suitable for power switches and drive applications in renewable energy devices such as solar inverters and wind power generation controllers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
