SPD04P10PG-VB Product details
Product introduction:
Regenerated detailed parameter description and application introduction:
SPD04P10PG-VB is a P-Channel trench MOSFET in TO252 package. Its main parameters include -100V rated voltage, -10A rated current, and on-state resistance at different gate-source voltages.
**Detailed parameter description:**
1. **Rated voltage (V):** -100V - This means that the device can work normally at a voltage of -100V. This is a P-Channel MOSFET, so its rated voltage is negative.
2. **Rated current (A):** -10A - This means that the maximum current that the device can withstand is -10 amperes.
3. **On-state resistance (RDS(ON)):** 188mΩ @ VGS=10V,
--VGS=±20V - This represents the on-state resistance of the device at different gate-source voltages. In this example, when the gate-source voltage is 10V or ±20V, the on-state resistance is 188 milliohms.
4. **Threshold voltage (Vth):** -1.77V - This is the threshold voltage of the device, which is the gate-source voltage at which the MOSFET starts to turn on.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | 280(mΩ) | 250(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Silkscreen: VBE2102M
Brand: VBsemi
Parameters:
- Package: TO252
- Channel type: P—Channel
- Rated voltage(V): -100V
- Rated current(A): -10A
- On-state resistance(RDS(ON)): 188mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage(Vth): -1.77V
Package: TO252
Domain and module applications:
1. **Power module:** Suitable for designing small power modules and providing efficient power solutions.
2. **Battery management:** Can be used in portable devices and battery-powered systems to effectively control current and voltage.
3. **Power switch:** Used in power switching circuits, such as DC-DC converters.
4. **Power tools:** In small power tools and equipment, such as electric screwdrivers, electric shavers, etc.
5. **Automotive electronics:** In automotive electronic systems, especially where P-Channel MOSFET is required, such as power management, lighting control, etc.
In general, SPD04P10PG-VB is a low-power P-Channel MOSFET, suitable for various power supply and switching circuit applications that require medium current and low on-resistance, especially in situations where lower rated voltage and low power are required, such as power management, portable devices, power tools and automotive electronics.
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