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MTD6P10ET4-VB Product details
Back to previous pageProduct introduction：
Application introduction:
MTD6P10ET4 (silk screen: VBE2102M) is a P-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction:
Detailed parameter description:
MTD6P10ET4 is a P-channel power MOSFET with high voltage and high current carrying capacity. The main parameters include rated voltage of -100V, rated current of -10A, RDS(ON) of 188mΩ @ 10V, 195mΩ @ 4.5V, gate-source voltage range of ±±20V, gate-source threshold voltage of -1.77V, and package type of TO252.
MTD6P10ET4 (VBE2102M) is a P-channel power MOSFET suitable for power management modules, high-voltage battery systems, electric vehicle charging piles, industrial control systems, and communication equipment. It has high voltage and high current carrying capacity, suitable for circuits requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | 280(mΩ) | 250(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Model: MTD6P10ET4
Silkscreen: VBE2102M
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -100V
- Rated current: -10A
- RDS(ON): 188mΩ @ 10V, 195mΩ @ 4.5V
- Gate-source voltage range: ±±20V
- Gate-source threshold voltage: -1.77V
- Package type: TO252
Silkscreen: VBE2102M
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -100V
- Rated current: -10A
- RDS(ON): 188mΩ @ 10V, 195mΩ @ 4.5V
- Gate-source voltage range: ±±20V
- Gate-source threshold voltage: -1.77V
- Package type: TO252
Domain and module applications：
Application fields:
MTD6P10ET4 (VBE2102M) is suitable for a variety of fields and application scenarios, especially for high-voltage and high-current circuits that require P-channel power MOSFETs. The following are some typical application fields:
1. Power management module: MTD6P10ET4 can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system.
2. High-voltage battery system: It can be applied to the charge and discharge control circuit in the high-voltage battery system, providing high-power and high-efficiency power conversion and battery management.
3. Electric vehicle charging pile: MTD6P10ET4 is suitable for the switching circuit in the electric vehicle charging pile to achieve efficient power conversion and stable current control.
4. Industrial control system and communication equipment: MTD6P10ET4 is suitable for power management and current control in industrial control systems and communication equipment, providing reliable power consumption control and current output.
MTD6P10ET4 (VBE2102M) is suitable for a variety of fields and application scenarios, especially for high-voltage and high-current circuits that require P-channel power MOSFETs. The following are some typical application fields:
1. Power management module: MTD6P10ET4 can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system.
2. High-voltage battery system: It can be applied to the charge and discharge control circuit in the high-voltage battery system, providing high-power and high-efficiency power conversion and battery management.
3. Electric vehicle charging pile: MTD6P10ET4 is suitable for the switching circuit in the electric vehicle charging pile to achieve efficient power conversion and stable current control.
4. Industrial control system and communication equipment: MTD6P10ET4 is suitable for power management and current control in industrial control systems and communication equipment, providing reliable power consumption control and current output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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