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RFD16N05LSM9A-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
RFD16N05LSM9A-VB is an N-Channel trench MOSFET produced by VBsemi brand. The device has a rated voltage of 60V and a maximum current carrying capacity of 45A. Its on-resistance (RDS(ON)) is 25mΩ @ VGS=10V; the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.8V. The package is TO252.
RFD16N05LSM9A-VB is an N-Channel trench MOSFET produced by VBsemi brand. The device has a rated voltage of 60V and a maximum current carrying capacity of 45A. Its on-resistance (RDS(ON)) is 25mΩ @ VGS=10V; the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.8V. The package is TO252.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
### Detailed parameter description:
- Brand: VBsemi
- Model: RFD16N05LSM9A-VB
- Package: TO252
- Channel type: N-Channel
- Rated voltage: 60V
- Maximum current: 45A
- On-resistance (RDS(ON)): 25mΩ @ VGS=10V
- Gate-source voltage range: ±20V
- Threshold voltage: 1.8V
- Brand: VBsemi
- Model: RFD16N05LSM9A-VB
- Package: TO252
- Channel type: N-Channel
- Rated voltage: 60V
- Maximum current: 45A
- On-resistance (RDS(ON)): 25mΩ @ VGS=10V
- Gate-source voltage range: ±20V
- Threshold voltage: 1.8V
Domain and module applications：
### Applicable fields and module examples:
1. Power modules: RFD16N05LSM9A-VB can be used in power switches and regulator modules to provide efficient power management and regulation.
2. Power tools: Due to its high current handling capability and low on-resistance characteristics, this transistor is suitable for power control and drive circuits in power tools.
3. Automotive electronics: In automotive electronic systems, RFD16N05LSM9A-VB can be used for battery management, drive control, and power distribution because it can withstand higher voltages and currents.
4. LED lighting: In LED lighting drive circuits, RFD16N05LSM9A-VB can be used to control the brightness and current of LEDs to achieve efficient lighting control.
1. Power modules: RFD16N05LSM9A-VB can be used in power switches and regulator modules to provide efficient power management and regulation.
2. Power tools: Due to its high current handling capability and low on-resistance characteristics, this transistor is suitable for power control and drive circuits in power tools.
3. Automotive electronics: In automotive electronic systems, RFD16N05LSM9A-VB can be used for battery management, drive control, and power distribution because it can withstand higher voltages and currents.
4. LED lighting: In LED lighting drive circuits, RFD16N05LSM9A-VB can be used to control the brightness and current of LEDs to achieve efficient lighting control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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