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RFD15N06LESM-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
RFD15N06LESM-VB is an N-Channel trench MOSFET produced by VBsemi, using TO252 package. It has a drain-source voltage of 60V, a maximum drain current of 45A, an RDS(ON) of 25mΩ @ VGS=10V and
--VGS=±20V, and a threshold voltage of 1.8V.
RFD15N06LESM-VB is an N-Channel trench MOSFET produced by VBsemi, using TO252 package. It has a drain-source voltage of 60V, a maximum drain current of 45A, an RDS(ON) of 25mΩ @ VGS=10V and
--VGS=±20V, and a threshold voltage of 1.8V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
### Detailed parameter description
- **Brand:** VBsemi
- **Model:** RFD15N06LESM-VB
- **Package:** TO252
- **Channel type:** N-Channel
- **Maximum drain-source voltage:** 60V
- **Maximum drain current:** 45A
- **On-resistance:** 25mΩ @ VGS=10V；
--VGS=±20V
- **Threshold voltage:** 1.8V
- **Brand:** VBsemi
- **Model:** RFD15N06LESM-VB
- **Package:** TO252
- **Channel type:** N-Channel
- **Maximum drain-source voltage:** 60V
- **Maximum drain current:** 45A
- **On-resistance:** 25mΩ @ VGS=10V；
--VGS=±20V
- **Threshold voltage:** 1.8V
Domain and module applications：
### Applicable fields and module examples
1. **Power management module:** Due to its high drain-source voltage and low on-resistance, RFD15N06LESM-VB can be used in power switch and current control circuits to provide efficient and stable power management functions.
2. **Motor drive:** In the motor drive circuit, RFD15N06LESM-VB can effectively control the start and stop and speed regulation of the motor to improve the performance and efficiency of the system.
3. **LED lighting control:** As a key component of the LED lighting control circuit, RFD15N06LESM-VB can realize the brightness adjustment and switch control of the LED, providing stable and reliable lighting effects.
4. **Battery management system:** In the battery management system, RFD15N06LESM-VB can be used for battery charge and discharge control and protection to ensure safe and reliable operation of the battery.
5. **Power switch:** Due to its high power and stability, RFD15N06LESM-VB can be used as various power switches, such as power inverter, frequency converter, etc.
1. **Power management module:** Due to its high drain-source voltage and low on-resistance, RFD15N06LESM-VB can be used in power switch and current control circuits to provide efficient and stable power management functions.
2. **Motor drive:** In the motor drive circuit, RFD15N06LESM-VB can effectively control the start and stop and speed regulation of the motor to improve the performance and efficiency of the system.
3. **LED lighting control:** As a key component of the LED lighting control circuit, RFD15N06LESM-VB can realize the brightness adjustment and switch control of the LED, providing stable and reliable lighting effects.
4. **Battery management system:** In the battery management system, RFD15N06LESM-VB can be used for battery charge and discharge control and protection to ensure safe and reliable operation of the battery.
5. **Power switch:** Due to its high power and stability, RFD15N06LESM-VB can be used as various power switches, such as power inverter, frequency converter, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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