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NTD5413NT4G-VB Product details
Back to previous pageProduct introduction：
### Parameter Description:
- **Load Operating Voltage (VDS)**: 60V, specifies the maximum voltage of the transistor when it is working under load.
- **Maximum Drain Current (ID)**: 45A, indicates the maximum drain current that the transistor can withstand.
- **Static Drain-Source Resistance (RDS(ON))**: Under different gate voltages, the static drain-source resistance is 25mΩ. This parameter indicates the on-resistance of the transistor when it is turned on.
- **Gate Threshold Voltage (Vth)**: 1.8V, is the gate voltage threshold at which the transistor starts to turn on.
The characteristics of the NTD5413NT4G-VB enable it to play an important role in various fields and modules, providing efficient and stable power control and management functions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
The following is the product introduction and detailed parameter description of the NTD5413NT4G-VB model:
### Product introduction:
NTD5413NT4G-VB is an N-Channel channel power field effect transistor produced by VBsemi, with the following features:
- Load operating voltage: 60V
- Maximum drain current: 45A
- Static drain-source resistance: 25mΩ @ VGS=10V
- Static drain-source resistance: 25mΩ @
--VGS=±20V
- Gate threshold voltage: 1.8V
- Package: TO252
### Product introduction:
NTD5413NT4G-VB is an N-Channel channel power field effect transistor produced by VBsemi, with the following features:
- Load operating voltage: 60V
- Maximum drain current: 45A
- Static drain-source resistance: 25mΩ @ VGS=10V
- Static drain-source resistance: 25mΩ @
--VGS=±20V
- Gate threshold voltage: 1.8V
- Package: TO252
Domain and module applications：
### Application fields and module examples:
1. **Power management module**: NTD5413NT4G-VB is suitable for various power management modules, such as switching power supplies, voltage regulators, etc., to provide stable power output and power management.
2. **Electric vehicles**: In electric vehicles, NTD5413NT4G-VB can be used to control the motors of electric vehicles to achieve efficient power output and energy saving and emission reduction.
3. **Industrial automation**: In the field of industrial automation, NTD5413NT4G-VB can be used to control various motors, actuators and sensors to achieve precise control and regulation.
1. **Power management module**: NTD5413NT4G-VB is suitable for various power management modules, such as switching power supplies, voltage regulators, etc., to provide stable power output and power management.
2. **Electric vehicles**: In electric vehicles, NTD5413NT4G-VB can be used to control the motors of electric vehicles to achieve efficient power output and energy saving and emission reduction.
3. **Industrial automation**: In the field of industrial automation, NTD5413NT4G-VB can be used to control various motors, actuators and sensors to achieve precise control and regulation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
