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NP22N055SLE-E1-AY-VB Product details
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The following is the product introduction and detailed parameter description of the NP22N055SLE-E1-AY-VB model:
### Product introduction:
NP22N055SLE-E1-AY-VB is an N-Channel channel power field effect transistor produced by VBsemi, with the following features:
- Load operating voltage: 60V
- Maximum drain current: 45A
- Static drain-source resistance: 25mΩ @ VGS=10V
- Static drain-source resistance: 25mΩ @
--VGS=±20V
- Gate threshold voltage: 1.8V
- Package: TO252
### Product introduction:
NP22N055SLE-E1-AY-VB is an N-Channel channel power field effect transistor produced by VBsemi, with the following features:
- Load operating voltage: 60V
- Maximum drain current: 45A
- Static drain-source resistance: 25mΩ @ VGS=10V
- Static drain-source resistance: 25mΩ @
--VGS=±20V
- Gate threshold voltage: 1.8V
- Package: TO252
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
### Parameter Description:
- **Load Operating Voltage (VDS)**: 60V, specifies the maximum voltage of the transistor when it is working under load.
- **Maximum Drain Current (ID)**: 45A, indicates the maximum drain current that the transistor can withstand.
- **Static Drain-Source Resistance (RDS(ON))**: Under different gate voltages, the static drain-source resistance is 25mΩ. This parameter indicates the on-resistance when the transistor is turned on.
- **Gate Threshold Voltage (Vth)**: 1.8V, is the gate voltage threshold at which the transistor starts to turn on.
- **Load Operating Voltage (VDS)**: 60V, specifies the maximum voltage of the transistor when it is working under load.
- **Maximum Drain Current (ID)**: 45A, indicates the maximum drain current that the transistor can withstand.
- **Static Drain-Source Resistance (RDS(ON))**: Under different gate voltages, the static drain-source resistance is 25mΩ. This parameter indicates the on-resistance when the transistor is turned on.
- **Gate Threshold Voltage (Vth)**: 1.8V, is the gate voltage threshold at which the transistor starts to turn on.
Domain and module applications：
### Application fields and module examples:
1. **Motor drive**: NP22N055SLE-E1-AY-VB is suitable for various motor drive applications, such as electric vehicles, industrial machinery and other fields, and can achieve efficient motor control and speed regulation functions.
2. **Power management**: In the power management module, NP22N055SLE-E1-AY-VB can be used in switching power supplies, voltage regulators and other applications to provide stable power output and power management.
3. **Solar inverter**: In the solar cell inverter, NP22N055SLE-E1-AY-VB can be used to achieve efficient conversion of DC power into AC power, which is suitable for solar power generation systems.
The characteristics of NP22N055SLE-E1-AY-VB enable it to play an important role in various fields and modules, providing efficient and stable power control and management functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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