VBA1302 Product details
Product introduction:
- Maximum drain-source voltage (VDS) is 30V;
- The maximum gate-source voltage (VGS) is plus or minus 20V;
- Threshold voltage (Vth) is 1.7V;
- When the gate-source voltage is 4.5V, the on-resistance (RDS(on)) is 4mΩ;
- When the gate-source voltage is 10V, the on-resistance is 3mΩ;
- Maximum drain current (ID) is 25A;
- Made using Trench technology;
- Packaged as SOP8.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Single-N | 30V | 20(±V) | 1.7V | 25A | 4 (mΩ) | 3 (mΩ) | Trench |
Brand: VBsemi
parameter:
-Single N
- VDS(V): 30
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- RDS(on) VGS=4.5V(m次): 4
- RDS(on) VGS=10V(m次): 3
- ID (A): 25
- Technology: Trench
Package: SOP8
Domain and module applications:
This MOSFET is suitable for circuits and modules that require high-performance switching, especially for the following fields and modules:
- Power Management Modules: Due to its low on-resistance and moderate drain current capability, it is suitable for power switches and current regulators in power management modules.
- Power tool module: can be used for motor control, battery management and power conditioning modules in power tools.
- LED driver module: In LED lighting systems, it is suitable for key modules such as LED drivers and dimmers.
- Communication equipment modules: Suitable for modules such as power amplifiers, radio frequency switches and signal conditioners in communication equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image