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IRFD12N06RLESM-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IRFD12N06RLESM-VB is an N-channel field effect transistor produced by the brand VBsemi. The device has a drain-source voltage rating of 60V and can withstand a maximum drain current of 45A. Its on-state on-resistance (RDS(ON)) is 25mΩ, which is the same when VGS=10V and
--VGS=±20V, and the gate-source threshold voltage (Vth) is 1.8V. The device is packaged in TO252.
IRFD12N06RLESM-VB is an N-channel field effect transistor produced by the brand VBsemi. The device has a drain-source voltage rating of 60V and can withstand a maximum drain current of 45A. Its on-state on-resistance (RDS(ON)) is 25mΩ, which is the same when VGS=10V and
--VGS=±20V, and the gate-source threshold voltage (Vth) is 1.8V. The device is packaged in TO252.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- Channel type: N-channel
- Rated drain-source voltage (VDS): 60V
- Maximum drain current (ID): 45A
- On-resistance (RDS(ON)): 25mΩ @ VGS=10V;
--VGS=±20V
- Gate-source threshold voltage (Vth): 1.8V
- Package type: TO252
- Channel type: N-channel
- Rated drain-source voltage (VDS): 60V
- Maximum drain current (ID): 45A
- On-resistance (RDS(ON)): 25mΩ @ VGS=10V;
--VGS=±20V
- Gate-source threshold voltage (Vth): 1.8V
- Package type: TO252
Domain and module applications：
3. Applicable fields and module examples:
1. **Power module**: IRFD12N06RLESM-VB is suitable for designing power modules for high-power power conversion, such as DC-DC converters, switching power supplies, etc. Its high drain-source voltage and drain current ratings can meet the requirements of high-power applications.
2. **Electric vehicle**: In the field of electric vehicles, this device can be used to design electric vehicle control modules, electric vehicle chargers, etc., because it can withstand high voltage and high current, while having low on-resistance, which can improve efficiency and performance.
3. **Industrial control**: IRFD12N06RLESM-VB is suitable for the design of modules such as motor drives and power switches in the field of industrial control. It can provide sufficient current and voltage, while having low on-resistance, improving the stability and reliability of the system.
1. **Power module**: IRFD12N06RLESM-VB is suitable for designing power modules for high-power power conversion, such as DC-DC converters, switching power supplies, etc. Its high drain-source voltage and drain current ratings can meet the requirements of high-power applications.
2. **Electric vehicle**: In the field of electric vehicles, this device can be used to design electric vehicle control modules, electric vehicle chargers, etc., because it can withstand high voltage and high current, while having low on-resistance, which can improve efficiency and performance.
3. **Industrial control**: IRFD12N06RLESM-VB is suitable for the design of modules such as motor drives and power switches in the field of industrial control. It can provide sufficient current and voltage, while having low on-resistance, improving the stability and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
