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HUFA76419D3S-VB Product details
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## Product Introduction:
**Model: ** HUFA76419D3S-VB
**Silkscreen: ** VBE1638
**Brand: ** VBsemi
**Package: ** TO252
HUFA76419D3S-VB is an N-channel MOSFET designed to handle high voltage and high current applications. With a drain-source voltage withstand capability of 60V and a drain current withstand capability of 45A, it is suitable for various power control and switching circuits.
## Detailed parameter description:
1. **Drain-source voltage (VDS):** This parameter indicates the maximum drain-source voltage that the MOSFET can withstand, that is, under normal working conditions, the voltage cannot exceed this value, otherwise the device may be damaged.
2. **Drain current (ID):** Indicates the maximum drain current that the MOSFET can withstand, that is, under normal working conditions, the current cannot exceed this value, otherwise it may cause the device to overheat or be damaged.
3. **On-resistance (RDS(ON)):** This is the resistance value of the MOSFET in the on state, also known as the on-resistance. Low on-resistance means less power loss and higher efficiency.
4. **Threshold voltage (Vth):** This is the gate threshold voltage of the MOSFET, indicating that when the voltage applied to the gate exceeds this value, the device starts to turn on.
**Model: ** HUFA76419D3S-VB
**Silkscreen: ** VBE1638
**Brand: ** VBsemi
**Package: ** TO252
HUFA76419D3S-VB is an N-channel MOSFET designed to handle high voltage and high current applications. With a drain-source voltage withstand capability of 60V and a drain current withstand capability of 45A, it is suitable for various power control and switching circuits.
## Detailed parameter description:
1. **Drain-source voltage (VDS):** This parameter indicates the maximum drain-source voltage that the MOSFET can withstand, that is, under normal working conditions, the voltage cannot exceed this value, otherwise the device may be damaged.
2. **Drain current (ID):** Indicates the maximum drain current that the MOSFET can withstand, that is, under normal working conditions, the current cannot exceed this value, otherwise it may cause the device to overheat or be damaged.
3. **On-resistance (RDS(ON)):** This is the resistance value of the MOSFET in the on state, also known as the on-resistance. Low on-resistance means less power loss and higher efficiency.
4. **Threshold voltage (Vth):** This is the gate threshold voltage of the MOSFET, indicating that when the voltage applied to the gate exceeds this value, the device starts to turn on.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
## Parameter Description:
- **Channel Type: ** N-Channel
- **Drain-Source Voltage (VDS): ** 60V
- **Drain Current (ID): ** 45A
- **On-Resistance (RDS(ON)): ** 25mΩ @ VGS=10V; ±20V
- **Threshold Voltage (Vth): ** 1.8V
- **Package Type: ** TO252
- **Channel Type: ** N-Channel
- **Drain-Source Voltage (VDS): ** 60V
- **Drain Current (ID): ** 45A
- **On-Resistance (RDS(ON)): ** 25mΩ @ VGS=10V; ±20V
- **Threshold Voltage (Vth): ** 1.8V
- **Package Type: ** TO252
Domain and module applications：
## Application fields and module examples:
1. **Power module:** HUFA76419D3S-VB can be used in the power switch part of the switching power module to help achieve high-efficiency and high-performance power design.
2. **Motor drive:** In the motor drive system, this MOSFET can be used in the motor control circuit to achieve high-efficiency motor control and speed regulation functions.
3. **Electric vehicle battery management system (BMS):** In the electric vehicle battery management system, HUFA76419D3S-VB can be used for battery charge and discharge control and protection circuits to ensure the safe operation of the battery system.
4. **LED lighting:** In the LED lighting drive circuit, this MOSFET can be used to dim and control the brightness of LED lights to achieve brightness adjustment and energy-saving control of lights.
5. **Industrial automation:** In industrial control systems, HUFA76419D3S-VB can be used to drive various actuators and sensors to achieve automatic control and data acquisition.
The characteristics of HUFA76419D3S-VB make it suitable for a variety of fields and modules, providing stable and reliable performance for electronic systems.
1. **Power module:** HUFA76419D3S-VB can be used in the power switch part of the switching power module to help achieve high-efficiency and high-performance power design.
2. **Motor drive:** In the motor drive system, this MOSFET can be used in the motor control circuit to achieve high-efficiency motor control and speed regulation functions.
3. **Electric vehicle battery management system (BMS):** In the electric vehicle battery management system, HUFA76419D3S-VB can be used for battery charge and discharge control and protection circuits to ensure the safe operation of the battery system.
4. **LED lighting:** In the LED lighting drive circuit, this MOSFET can be used to dim and control the brightness of LED lights to achieve brightness adjustment and energy-saving control of lights.
5. **Industrial automation:** In industrial control systems, HUFA76419D3S-VB can be used to drive various actuators and sensors to achieve automatic control and data acquisition.
The characteristics of HUFA76419D3S-VB make it suitable for a variety of fields and modules, providing stable and reliable performance for electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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