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HUF76429D_F085-VB Product details
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### Product Introduction:
VBsemi HUF76429D_F085-VB is an N-Channel trench MOSFET with high voltage and high current carrying capacity, suitable for various power electronic applications. The device adopts TO252 package, which is suitable for surface mount technology and easy to install and layout.
HUF76429D_F085-VB has important applications in various fields and modules, and its high performance characteristics make it an important part in power electronic design.
VBsemi HUF76429D_F085-VB is an N-Channel trench MOSFET with high voltage and high current carrying capacity, suitable for various power electronic applications. The device adopts TO252 package, which is suitable for surface mount technology and easy to install and layout.
HUF76429D_F085-VB has important applications in various fields and modules, and its high performance characteristics make it an important part in power electronic design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
### Parameter description:
- **Voltage rating**: 60V
- **Current rating**: 45A
- **On-resistance**: 25mΩ @ VGS=10V
- **Threshold voltage**: 1.8V
- **Maximum gate-source voltage**: ±20V
- **Voltage rating**: 60V
- **Current rating**: 45A
- **On-resistance**: 25mΩ @ VGS=10V
- **Threshold voltage**: 1.8V
- **Maximum gate-source voltage**: ±20V
Domain and module applications：
### Applicable fields and modules:
1. **Motor drive**: HUF76429D_F085-VB is widely used in motor control systems. Its high voltage and current carrying capacity make it an ideal choice for driving motors, suitable for industrial automation, home appliances and electric vehicles.
2. **Switching power supply**: In the design of switching power supply, this type of MOSFET can provide reliable power switching and energy conversion functions. Its low on-resistance and high current capability help improve the efficiency and stability of the switching power supply.
3. **Battery management**: In the battery charge and discharge management system, HUF76429D_F085-VB can be used for battery protection, charging and discharging control. Its high voltage rating and low on-resistance ensure stable control of high voltage and high current.
4. **LED drive**: In LED lighting systems, this type of MOSFET can be used in the design of LED drive circuits. Its high current handling capability and low on-resistance help improve the brightness and efficiency of LED lights.
1. **Motor drive**: HUF76429D_F085-VB is widely used in motor control systems. Its high voltage and current carrying capacity make it an ideal choice for driving motors, suitable for industrial automation, home appliances and electric vehicles.
2. **Switching power supply**: In the design of switching power supply, this type of MOSFET can provide reliable power switching and energy conversion functions. Its low on-resistance and high current capability help improve the efficiency and stability of the switching power supply.
3. **Battery management**: In the battery charge and discharge management system, HUF76429D_F085-VB can be used for battery protection, charging and discharging control. Its high voltage rating and low on-resistance ensure stable control of high voltage and high current.
4. **LED drive**: In LED lighting systems, this type of MOSFET can be used in the design of LED drive circuits. Its high current handling capability and low on-resistance help improve the brightness and efficiency of LED lights.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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