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HUF76409D3ST-VB Product details
Back to previous pageProduct introduction：
## Product Introduction:
**Model: ** HUF76409D3ST-VB
**Silkscreen: ** VBE1638
**Brand: ** VBsemi
**Package: ** TO252
HUF76409D3ST-VB is an N-channel MOSFET with a drain-source voltage withstand capability of 60V and a drain current withstand capability of 45A. Its characteristics include low on-resistance and suitable threshold voltage, which are suitable for a variety of fields and application modules.
The characteristics of HUF76409D3ST-VB make it suitable for many different application fields, thus providing high performance and reliability for various electronic systems.
**Model: ** HUF76409D3ST-VB
**Silkscreen: ** VBE1638
**Brand: ** VBsemi
**Package: ** TO252
HUF76409D3ST-VB is an N-channel MOSFET with a drain-source voltage withstand capability of 60V and a drain current withstand capability of 45A. Its characteristics include low on-resistance and suitable threshold voltage, which are suitable for a variety of fields and application modules.
The characteristics of HUF76409D3ST-VB make it suitable for many different application fields, thus providing high performance and reliability for various electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
## Parameter Description:
- **N-channel trench MOSFET**
- **Drain-source voltage (VDS):** 60V
- **Drain current (ID):** 45A
- **On-resistance (RDS(ON)):** 25mΩ @ VGS=10V； ±20V
- **Threshold voltage (Vth):** 1.8V
- **Package type:** TO252
- **N-channel trench MOSFET**
- **Drain-source voltage (VDS):** 60V
- **Drain current (ID):** 45A
- **On-resistance (RDS(ON)):** 25mΩ @ VGS=10V； ±20V
- **Threshold voltage (Vth):** 1.8V
- **Package type:** TO252
Domain and module applications：
## Applications and module examples:
1. **Power modules:** The high drain current capability and low on-resistance of HUF76409D3ST-VB make it an ideal choice in power modules, especially in high-performance, high-efficiency power supply designs.
2. **Motor drives:** Due to its ability to withstand higher currents and voltages, this MOSFET can play an important role in motor drive modules, especially in applications that require high efficiency and fast switching.
3. **Electric vehicle battery management system (BMS):** Electric vehicle battery management systems need to control and protect batteries, and the low on-resistance and high voltage capability of HUF76409D3ST-VB make it part of the BMS module for battery protection and management.
4. **LED lighting:** In LED lighting modules, this MOSFET can be used to dim and control the brightness of LED lights, and its high efficiency and low loss characteristics help improve the energy efficiency of the overall system.
5. **Industrial Automation:** In industrial automation control systems, this MOSFET can be used to drive various actuators and motors to achieve efficient automated production processes.
1. **Power modules:** The high drain current capability and low on-resistance of HUF76409D3ST-VB make it an ideal choice in power modules, especially in high-performance, high-efficiency power supply designs.
2. **Motor drives:** Due to its ability to withstand higher currents and voltages, this MOSFET can play an important role in motor drive modules, especially in applications that require high efficiency and fast switching.
3. **Electric vehicle battery management system (BMS):** Electric vehicle battery management systems need to control and protect batteries, and the low on-resistance and high voltage capability of HUF76409D3ST-VB make it part of the BMS module for battery protection and management.
4. **LED lighting:** In LED lighting modules, this MOSFET can be used to dim and control the brightness of LED lights, and its high efficiency and low loss characteristics help improve the energy efficiency of the overall system.
5. **Industrial Automation:** In industrial automation control systems, this MOSFET can be used to drive various actuators and motors to achieve efficient automated production processes.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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