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FQD20N06LTM-VB Product details
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The following is a product introduction, detailed parameter description, and description of applicable fields and modules for FQD20N06LTM-VB:
**Product Introduction:**
FQD20N06LTM-VB is an N-Channel trench power MOSFET launched by the brand VBsemi, using a TO252 package. It is designed to withstand drain-source voltages up to 60V and a maximum drain current of 45A. Its low on-resistance RDS(ON) is 25mΩ (at VGS=10V), which is suitable for various power control and switching applications.
**Product Introduction:**
FQD20N06LTM-VB is an N-Channel trench power MOSFET launched by the brand VBsemi, using a TO252 package. It is designed to withstand drain-source voltages up to 60V and a maximum drain current of 45A. Its low on-resistance RDS(ON) is 25mΩ (at VGS=10V), which is suitable for various power control and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description:**
- Drain-source voltage (VDS): 60V
- Drain current capacity (ID): 45A
- On-resistance (RDS(ON)): 25mΩ @ VGS=10V
- Threshold voltage (Vth): 1.8V
- Package: TO252
- Drain-source voltage (VDS): 60V
- Drain current capacity (ID): 45A
- On-resistance (RDS(ON)): 25mΩ @ VGS=10V
- Threshold voltage (Vth): 1.8V
- Package: TO252
Domain and module applications：
**Application fields and module examples:**
1. **Power modules**: Due to its high drain voltage and current capacity, FQD20N06LTM-VB can be used in power modules such as switching regulators and DC-DC converters. It is able to provide efficient power conversion and stable power output.
2. **Motor drive**: In the field of motor drive, this MOSFET can be used to control the power output of the motor. Its low on-resistance and high drain current capacity make it an ideal choice for motor drive circuits, such as in brushless DC motor (BLDC) drivers and stepper motor controllers.
3. **LED lighting**: FQD20N06LTM-VB is also suitable for LED lighting applications. It can be used as a power switch in LED drivers to ensure stable power supply and efficient operation of LED lamps.
4. **Battery Management System (BMS)**: In the battery management system, this MOSFET can be used for battery charge and discharge control and protection circuits. It can achieve efficient battery management in the BMS to ensure battery safety and performance.
In summary, the FQD20N06LTM-VB is suitable for a variety of applications that require high power density, high efficiency and stable performance, including but not limited to power modules, motor drives, LED lighting and battery management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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